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Results: 1-8 |
Results: 8
1 F NOISE, HYDROGEN TRANSPORT, AND LATENT INTERFACE-TRAP BUILDUP IN IRRADIATED MOS DEVICES/
Authors: FLEETWOOD DM JOHNSON MJ MEISENHEIMER TL WINOKUR PS WARREN WL WITCZAK SC
Citation: Dm. Fleetwood et al., 1 F NOISE, HYDROGEN TRANSPORT, AND LATENT INTERFACE-TRAP BUILDUP IN IRRADIATED MOS DEVICES/, IEEE transactions on nuclear science, 44(6), 1997, pp. 1810-1817
HARDNESS ASSURANCE TESTING OF BIPOLAR JUNCTION TRANSISTORS AT ELEVATED IRRADIATION TEMPERATURES
Authors: WITCZAK SC SCHRIMPF RD FLEETWOOD DM GALLOWAY KF LACOE RC MAYER DC PUHL JM PEASE RL SUEHLE JS
Citation: Sc. Witczak et al., HARDNESS ASSURANCE TESTING OF BIPOLAR JUNCTION TRANSISTORS AT ELEVATED IRRADIATION TEMPERATURES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1989-2000
RADIATION EFFECTS AT LOW ELECTRIC-FIELDS IN THERMAL, SIMOX, AND BIPOLAR-BASE OXIDES
Authors: FLEETWOOD DM RIEWE LC SCHWANK JR WITCZAK SC SCHRIMPF RD
Citation: Dm. Fleetwood et al., RADIATION EFFECTS AT LOW ELECTRIC-FIELDS IN THERMAL, SIMOX, AND BIPOLAR-BASE OXIDES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2537-2546
THE DETERMINATION OF SI-SIO2 INTERFACE-TRAP DENSITY IN IRRADIATED 4-TERMINAL VDMOSFETS USING CHARGE-PUMPING
Authors: WITCZAK SC GALLOWAY KF SCHRIMPF RD TITUS JL BREWS JR PREVOST G
Citation: Sc. Witczak et al., THE DETERMINATION OF SI-SIO2 INTERFACE-TRAP DENSITY IN IRRADIATED 4-TERMINAL VDMOSFETS USING CHARGE-PUMPING, IEEE transactions on nuclear science, 43(6), 1996, pp. 2558-2564
ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS
Authors: WITCZAK SC SCHRIMPF RD GALLOWAY KF FLEETWOOD DM PEASE RL PUHL JM SCHMIDT DM COMBS WE SUEHLE JS
Citation: Sc. Witczak et al., ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3151-3160
RELAXATION OF SI-SIO2 INTERFACIAL STRESS IN BIPOLAR SCREEN OXIDES DUETO IONIZING-RADIATION
Authors: WITCZAK SC GALLOWAY KF SCHRIMPF RD SUEHLE JS
Citation: Sc. Witczak et al., RELAXATION OF SI-SIO2 INTERFACIAL STRESS IN BIPOLAR SCREEN OXIDES DUETO IONIZING-RADIATION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1689-1697
THE INTERACTION OF STOICHIOMETRY, MECHANICAL-STRESS, AND INTERFACE-TRAP DENSITY IN LPCVD SI-RICH SINX-SI STRUCTURES
Authors: WITCZAK SC GAITAN M SUEHLE JS PECKERAR MC MA DI
Citation: Sc. Witczak et al., THE INTERACTION OF STOICHIOMETRY, MECHANICAL-STRESS, AND INTERFACE-TRAP DENSITY IN LPCVD SI-RICH SINX-SI STRUCTURES, Solid-state electronics, 37(10), 1994, pp. 1695-1704
SYNERGETIC EFFECTS OF RADIATION STRESS AND HOT-CARRIER STRESS ON THE CURRENT GAIN OF NPN BIPOLAR JUNCTION TRANSISTORS
Authors: WITCZAK SC KOSIER SL SCHRIMPF RD GALLOWAY KF
Citation: Sc. Witczak et al., SYNERGETIC EFFECTS OF RADIATION STRESS AND HOT-CARRIER STRESS ON THE CURRENT GAIN OF NPN BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2412-2419
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