Authors:
Lerch, W
Gluck, M
Stolwijk, NA
Walk, H
Schafer, M
Marcus, SD
Downey, DF
Chow, JW
Citation: W. Lerch et al., Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient, J ELCHEM SO, 146(7), 1999, pp. 2670-2678