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Results:
1-7
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Results: 7
Authors:
Ling, CC
Fung, S
Beling, CD
Weng, HM
Citation: Cc. Ling et al., Defect study of Zn-doped p-type gallium antimonide using positron lifetimespectroscopy - art. no. 075201, PHYS REV B, 6407(7), 2001, pp. 5201
Authors:
Zou, LJ
Xia, F
Zou, DW
Weng, HM
Huang, QF
Zhou, XY
Han, RD
Citation: Lj. Zou et al., A study of no.2 series ZrO2(Y2O3) thin film by slow positrons beam, ACT PHY C E, 49(7), 2000, pp. 1352-1355
Authors:
Du, JF
Shi, MJ
Zhou, XY
Fan, YM
Wu, JH
Ye, BJ
Weng, HM
Han, RD
Citation: Jf. Du et al., Realization of three-qubit Toffoli gate in molecules, CHIN PHYS L, 17(12), 2000, pp. 859-861
Authors:
Du, JF
Wu, JH
Shi, MJ
Han, L
Zhou, XY
Ye, BJ
Weng, HM
Han, RD
Citation: Jf. Du et al., Implementation of quantum logic gates by nuclear magnetic resonance spectroscopy, CHIN PHYS L, 17(1), 2000, pp. 64-66
Authors:
Zou, X
Chan, YC
Webb, DP
Lam, YW
Hu, YF
Beling, CD
Fung, S
Weng, HM
Citation: X. Zou et al., Photoinduced dehydrogenation of defects in undoped a-Si : H using positronannihilation spectroscopy, PHYS REV L, 84(4), 2000, pp. 769-772
Authors:
Fleischer, S
Hu, YF
Beling, CD
Fung, S
Smith, TL
Moulding, KM
Weng, HM
Missous, M
Citation: S. Fleischer et al., Positron beam study of low-temperature-grown GaAs with aluminum delta layers, APPL SURF S, 149(1-4), 1999, pp. 159-164
Authors:
Zhang, M
Lin, CL
Weng, HM
Scholz, R
Gosele, U
Citation: M. Zhang et al., Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam, THIN SOL FI, 333(1-2), 1998, pp. 245-250
Risultati:
1-7
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