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Results: 1-25 | 26-31
Results: 1-25/31
High-power highly reliable Al-free 940-nm diode lasers
Authors: Erbert, G Beister, G Hulsewede, R Knauer, A Pittroff, W Sebastian, J Wenzel, H Weyers, M Trankle, G
Citation: G. Erbert et al., High-power highly reliable Al-free 940-nm diode lasers, IEEE S T QU, 7(2), 2001, pp. 143-148
High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
Authors: Sebastian, J Beister, G Bugge, F Buhrandt, F Erbert, G Hansel, HG Hulsewede, R Knauer, A Pittroff, W Staske, R Schroder, M Wenzel, H Weyers, M Trankle, G
Citation: J. Sebastian et al., High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence, IEEE S T QU, 7(2), 2001, pp. 334-339
Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties
Authors: Knauer, A Wenzel, H Erbert, G Sumpf, B Weyers, M
Citation: A. Knauer et al., Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties, J ELEC MAT, 30(11), 2001, pp. 1421-1424
Recognition and imitation of pantomimed motor acts after unilateral parietal and premotor lesions: a perspective on apraxia
Authors: Halsband, U Schmitt, J Weyers, M Binkofski, F Grutzner, G Freund, HJ
Citation: U. Halsband et al., Recognition and imitation of pantomimed motor acts after unilateral parietal and premotor lesions: a perspective on apraxia, NEUROPSYCHO, 39(2), 2001, pp. 200-216
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing
Authors: Wurfl, J Kurpas, P Brunner, F Mai, M Rudolph, M Weyers, M
Citation: J. Wurfl et al., Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing, MICROEL REL, 41(8), 2001, pp. 1103-1108
Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence
Authors: Zeimer, U Grenzer, J Pietsch, U Gramlich, S Bugge, F Smirnitzki, V Weyers, M Trankle, G
Citation: U. Zeimer et al., Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence, J PHYS D, 34(10A), 2001, pp. A183-A187
(AlGa)As composition profile analysis of trenches overgrown with MOVPE
Authors: Hofmann, L Rudloff, D Rechenberg, I Knauer, A Christen, J Weyers, M
Citation: L. Hofmann et al., (AlGa)As composition profile analysis of trenches overgrown with MOVPE, J CRYST GR, 222(3), 2001, pp. 465-470
High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers
Authors: Knigge, A Zorn, M Wenzel, H Weyers, M Trankle, G
Citation: A. Knigge et al., High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers, ELECTR LETT, 37(20), 2001, pp. 1222-1223
12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells
Authors: Bugge, F Erbert, G Fricke, J Gramlich, S Staske, R Wenzel, H Zeimer, U Weyers, M
Citation: F. Bugge et al., 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells, APPL PHYS L, 79(13), 2001, pp. 1965-1967
Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy
Authors: Zeimer, U Bugge, F Gramlich, S Smirnitski, V Weyers, M Trankle, G Grenzer, J Pietsch, U Cassabois, G Emiliani, V Lienau, C
Citation: U. Zeimer et al., Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy, APPL PHYS L, 79(11), 2001, pp. 1611-1613
Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE
Authors: Brunner, F Richter, E Bergunde, T Rechenberg, I Bhattacharya, A Maassdorf, A Tomm, JW Kurpas, P Achouche, M Wurfl, J Weyers, M
Citation: F. Brunner et al., Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE, J ELEC MAT, 29(2), 2000, pp. 205-209
Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation
Authors: Knauer, A Bugge, F Erbert, G Wenzel, H Vogel, K Zeimer, U Weyers, M
Citation: A. Knauer et al., Optimization of GaAsP/AlGaAs-based QW laser structures for high power 800 nm operation, J ELEC MAT, 29(1), 2000, pp. 53-56
MOVPE growth of AlGaAs/GaInP diode lasers
Authors: Bugge, F Knauer, A Gramlich, S Rechenberg, I Beister, G Sebastian, J Wenzel, H Erbert, G Weyers, M
Citation: F. Bugge et al., MOVPE growth of AlGaAs/GaInP diode lasers, J ELEC MAT, 29(1), 2000, pp. 57-61
MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy
Authors: Haberland, K Bhattacharya, A Zorn, M Weyers, M Zettler, JT Richter, W
Citation: K. Haberland et al., MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy, J ELEC MAT, 29(1), 2000, pp. 94-98
Epitaxy of high-power diode laser structures
Authors: Weyers, M Bhattacharya, A Bugge, F Knauer, A
Citation: M. Weyers et al., Epitaxy of high-power diode laser structures, T APPL PHYS, 78, 2000, pp. 83-120
Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
Authors: Brunner, F Bergunde, T Richter, E Kurpas, P Achouche, M Maassdorf, A Wurfl, J Weyers, M
Citation: F. Brunner et al., Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor, J CRYST GR, 221, 2000, pp. 53-58
Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm
Authors: Bugge, F Zeimer, U Gramlich, S Rechenberg, I Sebastian, J Erbert, G Weyers, M
Citation: F. Bugge et al., Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm, J CRYST GR, 221, 2000, pp. 496-502
Optimization of MOVPE growth for 650 nm-emitting VCSELs
Authors: Bhattacharya, A Zorn, M Oster, A Nasarek, M Wenzel, H Sebastian, J Weyers, M Trankle, G
Citation: A. Bhattacharya et al., Optimization of MOVPE growth for 650 nm-emitting VCSELs, J CRYST GR, 221, 2000, pp. 663-667
Comparison of binary and ternary growth over trenches using MOVPE
Authors: Hofmann, L Knauer, A Rechenberg, I Zeimer, U Weyers, M
Citation: L. Hofmann et al., Comparison of binary and ternary growth over trenches using MOVPE, J CRYST GR, 213(3-4), 2000, pp. 229-234
Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor
Authors: Dauelsberg, M Kadinski, L Makarov, YN Bergunde, T Strauch, G Weyers, M
Citation: M. Dauelsberg et al., Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor, J CRYST GR, 208(1-4), 2000, pp. 85-92
High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
Authors: Erbert, G Bugge, F Knauer, A Sebastian, J Thies, A Wenzel, H Weyers, M Trankle, G
Citation: G. Erbert et al., High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm, IEEE S T QU, 5(3), 1999, pp. 780-784
Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors
Authors: Richter, E Brunner, F Gramlich, S Hahle, S Mai, M Zeimer, U Weyers, M
Citation: E. Richter et al., Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors, MAT SCI E B, 66(1-3), 1999, pp. 162-173
Correlation of InGaP(001) surface structure during growth and bulk ordering
Authors: Zorn, M Kurpas, P Shkrebtii, AI Junno, B Bhattacharya, A Knorr, K Weyers, M Samuelson, L Zettler, JT Richter, W
Citation: M. Zorn et al., Correlation of InGaP(001) surface structure during growth and bulk ordering, PHYS REV B, 60(11), 1999, pp. 8185-8190
Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy
Authors: Hofmann, L Knauer, A Rechenberg, I Weyers, M Stolz, W
Citation: L. Hofmann et al., Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy, J CRYST GR, 206(4), 1999, pp. 255-262
Analysis of Bragg reflectors by lateral photoluminescence spectroscopy
Authors: Gramlich, S Sebastian, J Weyers, M
Citation: S. Gramlich et al., Analysis of Bragg reflectors by lateral photoluminescence spectroscopy, MATER SCI T, 14(12), 1998, pp. 1314-1316
Risultati: 1-25 | 26-31