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Results: 1-19 |
Results: 19
Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability
Authors: Nosho, BZ Bennett, BR Whitman, LJ Goldenberg, M
Citation: Bz. Nosho et al., Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability, J VAC SCI B, 19(4), 2001, pp. 1626-1630
Type-II antimonide quantum wells for mid-infrared lasers
Authors: Yang, MJ Meyer, JR Bewley, WW Felix, CL Vurgaftman, I Barvosa-Carter, W Whitman, LJ Bartolo, RE Stokes, DW Lee, H Martinelli, RU
Citation: Mj. Yang et al., Type-II antimonide quantum wells for mid-infrared lasers, OPT MATER, 17(1-2), 2001, pp. 179-183
A DNA array sensor utilizing magnetic microbeads and magnetoelectronic detection
Authors: Miller, MM Sheehan, PE Edelstein, RL Tamanaha, CR Zhong, L Bounnak, S Whitman, LJ Colton, RJ
Citation: Mm. Miller et al., A DNA array sensor utilizing magnetic microbeads and magnetoelectronic detection, J MAGN MAGN, 225(1-2), 2001, pp. 138-144
Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces - art. no. 245311
Authors: Barvosa-Carter, W Twigg, ME Yang, MJ Whitman, LJ
Citation: W. Barvosa-carter et al., Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces - art. no. 245311, PHYS REV B, 6324(24), 2001, pp. 5311
Initial stages of Sb-2 deposition on InAs(001)
Authors: Nosho, BZ Shanabrook, BV Bennett, BR Barvosa-Carter, W Weinberg, WH Whitman, LJ
Citation: Bz. Nosho et al., Initial stages of Sb-2 deposition on InAs(001), SURF SCI, 478(1-2), 2001, pp. 1-8
Step structures and energies on monahydride-terminated vicinal Si(001) surfaces
Authors: Laracuente, A Whitman, LJ
Citation: A. Laracuente et Lj. Whitman, Step structures and energies on monahydride-terminated vicinal Si(001) surfaces, SURF SCI, 476(3), 2001, pp. L247-L253
Barrier roughness effects in resonant interband tunnel diodes
Authors: Magno, R Bracker, AS Bennett, BR Nosho, BZ Whitman, LJ
Citation: R. Magno et al., Barrier roughness effects in resonant interband tunnel diodes, J APPL PHYS, 90(12), 2001, pp. 6177-6181
Stoichiometry-induced roughness on antimonide growth surfaces
Authors: Bracker, AS Nosho, BZ Barvosa-Carter, W Whitman, LJ Bennett, BR Shanabrook, BV Culbertson, JC
Citation: As. Bracker et al., Stoichiometry-induced roughness on antimonide growth surfaces, APPL PHYS L, 78(17), 2001, pp. 2440-2442
The BARC biosensor applied to the detection of biological warfare agents
Authors: Edelstein, RL Tamanaha, CR Sheehan, PE Miller, MM Baselt, DR Whitman, LJ Colton, RJ
Citation: Rl. Edelstein et al., The BARC biosensor applied to the detection of biological warfare agents, BIOSENS BIO, 14(10-11), 2000, pp. 805-813
A micromachined magnetic-field sensor based on an electron tunneling displacement transducer
Authors: DiLella, D Whitman, LJ Colton, RJ Kenny, TW Kaiser, WJ Vote, EC Podosek, JA Miller, LM
Citation: D. Dilella et al., A micromachined magnetic-field sensor based on an electron tunneling displacement transducer, SENS ACTU-A, 86(1-2), 2000, pp. 8-20
Interpreting interfacial structure in cross-sectional STM images of III-V semiconductor heterostructures
Authors: Nosho, BZ Barvosa-Carter, W Yang, MJ Bennett, BR Whitman, LJ
Citation: Bz. Nosho et al., Interpreting interfacial structure in cross-sectional STM images of III-V semiconductor heterostructures, SURF SCI, 465(3), 2000, pp. 361-371
Structure of III-Sb(001) growth surfaces: The role of heterodimers
Authors: Barvosa-Carter, W Bracker, AS Culbertson, JC Nosho, BZ Shanabrook, BV Whitman, LJ Kim, H Modine, NA Kaxiras, E
Citation: W. Barvosa-carter et al., Structure of III-Sb(001) growth surfaces: The role of heterodimers, PHYS REV L, 84(20), 2000, pp. 4649-4652
Characterization of AlSb/InAs surfaces and resonant tunneling devices
Authors: Nosho, BZ Weinberg, WH Barvosa-Carter, W Bracker, AS Magno, R Bennett, BR Culbertson, JC Shanabrook, BV Whitman, LJ
Citation: Bz. Nosho et al., Characterization of AlSb/InAs surfaces and resonant tunneling devices, J VAC SCI B, 17(4), 1999, pp. 1786-1790
The structure of Sb-terminated GaAs(001) surfaces
Authors: Whitman, LJ Bennett, BR Kneedler, EM Jonker, BT Shanabrook, BV
Citation: Lj. Whitman et al., The structure of Sb-terminated GaAs(001) surfaces, SURF SCI, 436(1-3), 1999, pp. L707-L714
The structure of Si(112): Ga-(Nx1) reconstructions
Authors: Baski, AA Erwin, SC Whitman, LJ
Citation: Aa. Baski et al., The structure of Si(112): Ga-(Nx1) reconstructions, SURF SCI, 423(2-3), 1999, pp. L265-L270
Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112)
Authors: Erwin, SC Baski, AA Whitman, LJ Rudd, RE
Citation: Sc. Erwin et al., Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112), PHYS REV L, 83(9), 1999, pp. 1818-1821
Effects of surface reconstruction on III-V semiconductor interface formation: The role of III/V composition
Authors: Nosho, BZ Weinberg, WH Barvosa-Carter, W Bennett, BR Shanabrook, BV Whitman, LJ
Citation: Bz. Nosho et al., Effects of surface reconstruction on III-V semiconductor interface formation: The role of III/V composition, APPL PHYS L, 74(12), 1999, pp. 1704-1706
A monohydride high-index silicon surface: Si(114): H-(2x1)
Authors: Laracuente, A Erwin, SC Whitman, LJ
Citation: A. Laracuente et al., A monohydride high-index silicon surface: Si(114): H-(2x1), APPL PHYS L, 74(10), 1999, pp. 1397-1399
Structure of Ge(113): Origin and stability of surface self-interstitials
Authors: Laracuente, A Erwin, SC Whitman, LJ
Citation: A. Laracuente et al., Structure of Ge(113): Origin and stability of surface self-interstitials, PHYS REV L, 81(23), 1998, pp. 5177-5180
Risultati: 1-19 |