Authors:
Balandin, A
Morozov, S
Wijeratne, G
Cai, SJ
Li, R
Li, J
Wang, KL
Viswanathan, CR
Dubrovskii, Y
Citation: A. Balandin et al., Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors, APPL PHYS L, 75(14), 1999, pp. 2064-2066