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Results:
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Results: 1
Reactive ion etch-induced effects on the near-band-edge luminescence in GaN
Authors:
Cheung, R Withanage, S Reeves, RJ Brown, SA Ben-Yaacov, I Kirchner, C Kamp, M
Citation:
R. Cheung et al., Reactive ion etch-induced effects on the near-band-edge luminescence in GaN, APPL PHYS L, 74(21), 1999, pp. 3185-3187
Risultati:
1-1
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