AAAAAA

   
Results: 1-2 |
Results: 2
Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy
Authors: Dimitrov, R Mitchell, A Wittmer, L Ambacher, O Stutzmann, M Hilsenbeck, J Rieger, W
Citation: R. Dimitrov et al., Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy, JPN J A P 1, 38(9A), 1999, pp. 4962-4968
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Authors: Ambacher, O Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Schaff, WJ Eastman, LF Dimitrov, R Wittmer, L Stutzmann, M Rieger, W Hilsenbeck, J
Citation: O. Ambacher et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, J APPL PHYS, 85(6), 1999, pp. 3222-3233
Risultati: 1-2 |