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Results:
1-9
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Results: 9
Authors:
Wondrak, W
Held, R
Niemann, E
Schmid, U
Citation: W. Wondrak et al., SiC devices for advanced power and high-temperature applications, IEEE IND E, 48(2), 2001, pp. 307-308
Authors:
Manca, JV
Wondrak, W
Schaper, W
Croes, K
De Ceuninck, W
Dieval, B
Hartnagel, HL
D'Olieslaeger, M
De Schepper, L
Citation: Jv. Manca et al., Reliability aspects of high temperature power MOSFETs, MICROEL REL, 40(8-10), 2000, pp. 1679-1682
Authors:
Schmid, U
Sheppard, ST
Wondrak, W
Citation: U. Schmid et al., High temperature performance of NMOS integrated inverters and ring oscillators in 6H-SiC, IEEE DEVICE, 47(4), 2000, pp. 687-691
Authors:
Lades, M
Berz, D
Schmid, U
Sheppard, ST
Kaminski, N
Wondrak, W
Wachutka, G
Citation: M. Lades et al., Numerical simulation of implanted top-gate GH-SiC JFET characteristics, MAT SCI E B, 61-2, 1999, pp. 415-418
Authors:
Schmid, U
Sheppard, ST
Wondrak, W
Niemann, E
Citation: U. Schmid et al., Electrical characterization of 6H-SiC enhancement-mode MOSFETs at high temperatures, MAT SCI E B, 61-2, 1999, pp. 493-496
Authors:
Wischmeyer, F
Wondrak, W
Leidich, D
Niemann, E
Citation: F. Wischmeyer et al., CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure, MAT SCI E B, 61-2, 1999, pp. 563-566
Authors:
Schmid, U
Sheppard, ST
Wondrak, W
Citation: U. Schmid et al., Circular and linear enhancement-mode 6H-SiC MOSFETs for high temperature applications, J ELEC MAT, 28(3), 1999, pp. 148-153
Authors:
Wondrak, W
Citation: W. Wondrak, Physical limits and lifetime limitations of semiconductor devices at high temperatures, MICROEL REL, 39(6-7), 1999, pp. 1113-1120
Authors:
Schmid, U
Getto, R
Sheppard, ST
Wondrak, W
Citation: U. Schmid et al., Temperature behavior of specific contact resistance and resistivity on nitrogen implanted 6H-SiC with titanium silicide ohmic contacts, J APPL PHYS, 85(5), 1999, pp. 2681-2686
Risultati:
1-9
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