Authors:
BONDARENKO VP
BOGATIREV YV
COLINGE JP
DOLGYI LN
DOROFEEV AM
YAKOVTSEVA VA
Citation: Vp. Bondarenko et al., TOTAL GAMMA-DOSE CHARACTERISTICS OF CMOS DEVICES IN SOI STRUCTURES BASED ON OXIDIZED POROUS SILICON, IEEE transactions on nuclear science, 44(5), 1997, pp. 1719-1723