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Results: 1-25/26
Authors:
PARK SJ
YANG ES
KIMHA J
KIM YJ
Citation: Sj. Park et al., DOWN-REGULATION OF EXTRAMACROCHAETAE MESSENGER-RNA BY A DROSOPHILA NEURAL RNA-BINDING PROTEIN RBP9 WHICH IS HOMOLOGOUS TO HUMAN HU PROTEINS, Nucleic acids research, 26(12), 1998, pp. 2989-2994
Authors:
LEE BJ
CHITTUM HS
BAEK HJ
PARK SI
YANG ES
GLADYSHEV VN
PARK JM
MOUSTAFA ME
CARLSON BA
DIAMOND AM
HATFIELD DL
Citation: Bj. Lee et al., ROLE OF SELENOCYSTEINE (SEC) TRNA([SER]SEC) IN SELENOPROTEIN BIOSYNTHESIS, The FASEB journal, 11(9), 1997, pp. 2199-2199
Authors:
HATFIELD D
PARK SI
PARK JM
CHITTUM HS
BECK HJ
GLADYSHEV VN
YANG ES
CARLSON BA
CHOI IS
MOUSTAFA ME
LEE BJ
Citation: D. Hatfield et al., EXPRESSION, BIOSYNTHESIS AND FUNCTION OF SELENOCYSTEINE (SEC) TRANSFER-RNAS AS CENTRAL COMPONENTS OF SEC INSERTION INTO PROTEIN, The FASEB journal, 11(3), 1997, pp. 1367-1367
Authors:
YANG YF
HSU CC
OU HJ
HUANG TC
YANG ES
Citation: Yf. Yang et al., FABRICATION AND CHARACTERISTICS OF A GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR USING A SELECTIVE BURIED SUB-COLLECTOR/, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2122-2127
Authors:
OU HJ
HSU CC
YANG YF
YANG ES
Citation: Hj. Ou et al., HIGH-FREQUENCY GAINP GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR WITH TOW OFFSET VOLTAGE/, Electronics Letters, 33(8), 1997, pp. 714-716
Authors:
HSU CC
YANG YF
OU HJ
YANG ES
LO HB
Citation: Cc. Hsu et al., CARBON-DOPED GAIN GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING NITROGEN AS THE CARRIER GAS/, Applied physics letters, 71(22), 1997, pp. 3248-3250
INTEGRATION OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors:
YANG YF
HSU CC
YANG ES
Citation: Yf. Yang et al., INTEGRATION OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND HIGH-ELECTRON-MOBILITY TRANSISTORS/, IEEE electron device letters, 17(7), 1996, pp. 363-365
Authors:
YANG YF
HSU CC
YANG ES
OU HJ
Citation: Yf. Yang et al., A HIGH-FREQUENCY GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH REDUCED BASE-COLLECTOR CAPACITANCE USING A SELECTIVE BURIED SUB-COLLECTOR/, IEEE electron device letters, 17(11), 1996, pp. 531-533
Authors:
YANG YF
HSU CC
YANG ES
Citation: Yf. Yang et al., HIGH-FREQUENCY AND LOW-NOISE C-DOPED GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOCVD USING TEA AND TBP/, Electronics Letters, 32(7), 1996, pp. 689-691
Authors:
PARK JM
YANG ES
HATFIELD DL
LEE BJ
Citation: Jm. Park et al., ANALYSIS OF THE SELENOCYSTEINE TRNA([SER]SEC) GENE-TRANSCRIPTION IN-VITRO USING XENOPUS OOCYTE EXTRACTS, Biochemical and biophysical research communications, 226(1), 1996, pp. 231-236
Authors:
HSU CC
YANG YF
OU HJ
YANG ES
Citation: Cc. Hsu et al., CCL4-DOPED SEMIINSULATING INP AS A BUFFER LAYER IN GAINAS INP HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(8), 1996, pp. 1143-1144
Authors:
TCHIKATILOV D
YANG YF
YANG ES
Citation: D. Tchikatilov et al., IMPROVEMENT OF SIGE OXIDE GROWN BY ELECTRON-CYCLOTRON-RESONANCE USINGH2O VAPOR ANNEALING, Applied physics letters, 69(17), 1996, pp. 2578-2580
Authors:
YANG YF
HSU CC
YANG ES
Citation: Yf. Yang et al., PREVENTION OF BASE DOPANT OUT-DIFFUSION USING A HETEROSTRUCTURE-EMITTER IN GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Semiconductor science and technology, 10(3), 1995, pp. 339-343
Authors:
YANG YF
HSU CC
YANG ES
CHEN YK
Citation: Yf. Yang et al., COMPARISON OF GAINP GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS AND HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1210-1215
Authors:
YANG YF
HSU CC
YANG ES
Citation: Yf. Yang et al., CARBON-DOPED GAINP GAAS DOUBLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAIN/, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1383-1386
Authors:
HONG SH
MILLER JR
MA QY
YANG ES
LUKE GM
Citation: Sh. Hong et al., INHIBITION OF SUPERCONDUCTIVITY IN YBACUO FILMS BY ALUMINUM ION-IMPLANTATION, Applied physics letters, 67(18), 1995, pp. 2717-2719
SIGE PMOSFETS WITH GATE OXIDE FABRICATED BY MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING
Authors:
LI PW
YANG ES
YANG YF
CHU JO
MEYERSON BS
Citation: Pw. Li et al., SIGE PMOSFETS WITH GATE OXIDE FABRICATED BY MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING, IEEE electron device letters, 15(10), 1994, pp. 402-405
Authors:
YANG YF
HSU CC
YANG ES
Citation: Yf. Yang et al., SURFACE RECOMBINATION CURRENT IN INGAP GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 643-647
Authors:
YANG YF
HSU CC
YANG ES
Citation: Yf. Yang et al., PSEUDOMORPHIC GA0.2IN0.8P GA-0.47,IN0.53AS/INP HEMT GROWN BY MOVPE USING TBP AND TBA/, Electronics Letters, 30(22), 1994, pp. 1894-1895
Authors:
YANG YF
WANG WI
YANG ES
Citation: Yf. Yang et al., STATE HOLDING CIRCUIT USING HETEROJUNCTION BIPOLAR-TRANSISTORS AND RESONANT-TUNNELING DIODES, Electronics Letters, 30(1), 1994, pp. 90-92
Authors:
GENNSER U
KESAN VP
IYER SS
OTT JA
YANG ES
Citation: U. Gennser et al., INFLUENCE OF DEVICE STRUCTURE AND GROWTH-CONDITIONS ON THE TUNNELING CHARACTERISTICS OF SI SI1-XGEX DOUBLE-BARRIER STRUCTURES/, Journal of electronic materials, 22(9), 1993, pp. 1173-1177
Authors:
WANG Y
YANG ES
WANG WI
Citation: Y. Wang et al., HIGH-GAIN AND WIDE DYNAMIC-RANGE PUNCHTHROUGH HETEROJUNCTION PHOTOTRANSISTORS, Journal of applied physics, 74(11), 1993, pp. 6978-6981
Authors:
LIOU HK
YANG ES
TU KN
Citation: Hk. Liou et al., NONALLOYED OHMIC CONTACTS TO N-SI USING A STRAINED SI0.50GE0.50 BUFFER LAYER, Applied physics letters, 63(7), 1993, pp. 911-913
Authors:
GENNSER U
KESAN VP
SYPHERS DA
SMITH TP
IYER SS
YANG ES
Citation: U. Gennser et al., SIMILARITIES BETWEEN THE LANDAU SPECTRA AND DISPERSION-RELATIONS IN SI SI1-XGEX QUANTUM-WELLS INVESTIGATED BY MAGNETOTUNNELING SPECTROSCOPY/, Applied physics letters, 63(4), 1993, pp. 545-547
Authors:
LI PW
YANG ES
Citation: Pw. Li et Es. Yang, SIGE GATE OXIDE PREPARED AT LOW-TEMPERATURE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 63(21), 1993, pp. 2938-2940