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Results:
1-8
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Results: 8
Authors:
BALAGUROV LA
YARKIN DG
PETROVICHEVA GA
PETROVA EA
ORLOV AF
ANDRYUSHIN SY
Citation: La. Balagurov et al., HIGHLY SENSITIVE POROUS SILICON-BASED PHOTODIODE STRUCTURES, Journal of applied physics, 82(9), 1997, pp. 4647-4650
Authors:
KAZANSKII AG
YARKIN DG
Citation: Ag. Kazanskii et Dg. Yarkin, EFFECT OF PROLONGED ILLUMINATION ON THE PROPERTIES OF COMPENSATED HYDROGENATED SILICON A-SI-H, Semiconductors, 30(4), 1996, pp. 397-399
Authors:
KAZANSKII AG
KUROVA IA
ZVYAGIN IP
YARKIN DG
Citation: Ag. Kazanskii et al., NONMONOTONE KINETICS OF PERSISTENT PHOTOCONDUCTIVITY IN COMPENSATED A-SI-H FILMS, Journal of non-crystalline solids, 200, 1996, pp. 470-473
Authors:
BALAGUROV LA
YARKIN DG
PETROVA EA
ORLOV AF
KARYAGIN SN
Citation: La. Balagurov et al., EFFECTS OF VACUUM ANNEALING ON THE OPTICAL-PROPERTIES OF POROUS SILICON, Applied physics letters, 69(19), 1996, pp. 2852-2854
Authors:
YARKIN DG
KONSTANTINOVA EA
TIMOSHENKO VA
Citation: Dg. Yarkin et al., OPTICAL-ABSORPTION OF LUMINESCENT POROUS SILICON FILMS, Semiconductors, 29(4), 1995, pp. 348-349
Authors:
KAZANSKII AG
MELNIKOV AV
YARKIN DG
Citation: Ag. Kazanskii et al., THE INFLUENCE OF THE DOPANTS CONCENTRATIO N ON THE CONDUCTIVITY, PHOTOCONDUCTIVITY AND ABSORPTION-COEFFICIENT OF THE COMPENSATED ALPHA-SI-H, Vestnik Moskovskogo universiteta. Seria 3. Fizika, astronomia, 36(1), 1995, pp. 56-60
Authors:
KAZANSKII AG
YARKIN DG
Citation: Ag. Kazanskii et Dg. Yarkin, DRIFT MOBILITY OF ELECTRONS IN PHOSPHORUS-DOPED A-SIH, Semiconductors, 28(5), 1994, pp. 519-521
Authors:
KAZANSKII AG
YARKIN DG
Citation: Ag. Kazanskii et Dg. Yarkin, INFLUENCE OF THE DOPANT CONCENTRATION AND TEMPERATURE ON THE STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED A-SI-H FILMS, Semiconductors, 27(10), 1993, pp. 935-937
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