Authors:
EDGAR JH
GAO Y
CHAUDHURI J
CHEEMA S
CASALNUOVO SA
YIP PW
SIDOROV MV
Citation: Jh. Edgar et al., SELECTIVE EPITAXIAL-GROWTH OF SILICON-CARBIDE ON SIO2 MASKED SI(100) - THE EFFECTS OF TEMPERATURE, Journal of applied physics, 84(1), 1998, pp. 201-204
Citation: Kp. Quinlan et al., OXIDATION OF N-INP AND INDIUM IN THE NEGATIVE POTENTIAL REGION AT PH-5, Journal of the Electrochemical Society, 143(2), 1996, pp. 524-530