Authors: YOSHIKAWA MR SAITOH K OHSHIMA T ITOH H NASHIYAMA I YOSHIDA S OKUMURA H TAKAHASHI Y OHNISHI K

Citation: Mr. Yoshikawa et al., DEPTH PROFILE OF TRAPPED CHARGES IN OXIDE LAYER OF 6H-SIC METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Journal of applied physics, 80(1), 1996, pp. 282-287