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Results: 26-32/32
Authors:
JOGAI B
YU PW
STREIT DC
Citation: B. Jogai et al., FREE-ELECTRON DISTRIBUTION IN DELTA-DOPED INGAAS ALGAAS PSEUDOMORPHICHIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Journal of applied physics, 75(3), 1994, pp. 1586-1591
Authors:
YU PW
JOGAI B
ROGERS TJ
MARTIN PA
BALLINGALL JM
Citation: Pw. Yu et al., TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE LINEWIDTH IN MODULATION-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALXGA1-XAS INYGA1-YAS GAAS STRUCTURES, Applied physics letters, 65(25), 1994, pp. 3263-3265
Authors:
REYNOLDS DC
JOGAI B
YU PW
EVANS KR
STUTZ CE
Citation: Dc. Reynolds et al., RESONANT COUPLING OF ORBITAL ANGULAR-MOMENTUM COMPONENTS IN THE BARRIER WITH ANALOGOUS COMPONENTS IN THE WELL IN INXGA1-XAS-GAAS QUANTUM-WELLS, Applied physics letters, 64(5), 1994, pp. 604-606
Authors:
YU PW
STUTZ CE
Citation: Pw. Yu et Ce. Stutz, EFFECTS OF HEAT-TREATMENT ON THE 0.8 EV PHOTOLUMINESCENCE EMISSION INGAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Journal of electronic materials, 22(12), 1993, pp. 1441-1444
Authors:
REYNOLDS DC
EVANS KR
JOGAI B
STUTZ CE
YU PW
Citation: Dc. Reynolds et al., PHOTOLUMINESCENCE STUDY OF SYMMETRICAL, COUPLED, DOUBLE INXGA1-XAS-GAAS QUANTUM-WELL STRUCTURES, Solid state communications, 86(5), 1993, pp. 339-345
Authors:
REYNOLDS DC
JOGAI B
YU PW
STUTZ CE
Citation: Dc. Reynolds et al., EXCITATION OF OPTICAL-TRANSITIONS IN THE INXGA1-XAS-GAAS QUANTUM-WELLSYSTEM BY THE FREE-EXCITON IN THE BARRIER, Journal of applied physics, 74(2), 1993, pp. 1453-1455
Authors:
YU PW
TALWAR DN
STUTZ CE
Citation: Pw. Yu et al., EFFECTS OF HEAT-TREATMENT ON SHARP-LINE PHOTOLUMINESCENCE OF GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY, Applied physics letters, 62(21), 1993, pp. 2608-2610