Authors: YUNKIN VA LUKICHEV VF RUDENKO KV FISCHER D VOGES E

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Authors: YUNKIN VA FISCHER D VOGES E

Citation: Va. Yunkin et al., REACTIVE ION ETCHING OF SILICON SUBMICRON-SIZED TRENCHES IN SF6 C2CL3F3 PLASMA/, Microelectronic engineering, 27(1-4), 1995, pp. 463-466

Authors: AVRUTIN VS IZUMSKAYA NF VYATKIN AF YUNKIN VA

Citation: Vs. Avrutin et al., SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON ULTRA-SMALL MESA STRUCTURES, Journal of crystal growth, 157(1-4), 1995, pp. 276-279

Authors: YUNKIN VA RANGELOW IW SCHAEFER JA FISCHER D VOGES E SLOBOSHANIN S

Citation: Va. Yunkin et al., EXPERIMENTAL-STUDY OF ANISOTROPY MECHANISMS DURING REACTIVE ION ETCHING OF SILICON IN A SF6 C2CL3F3 PLASMA/, Microelectronic engineering, 23(1-4), 1994, pp. 361-364

Authors: YUNKIN VA FISCHER D VOGES E

Citation: Va. Yunkin et al., HIGHLY ANISOTROPIC SELECTIVE REACTIVE ION ETCHING OF DEEP TRENCHES INSILICON, Microelectronic engineering, 23(1-4), 1994, pp. 373-376