Citation: Jn. Yang et al., Edge transistor elimination in oxide trench isolated N-channel metal-oxide-semiconductor field effect transistors, J VAC SCI B, 19(2), 2001, pp. 327-332
Citation: Jn. Yang et Ak. Agrawal, Protective systems for high-technology facilities against microvibration and earthquake, STRUC ENG M, 10(6), 2000, pp. 561-575
Citation: Ak. Agrawal et Jn. Yang, Optimal placement of passive dampers on seismic and wind-excited buildingsusing combinatorial optimization, J IN MAT SY, 10(12), 1999, pp. 997-1014