Authors:
Kachurin, GA
Yanovskaya, SG
Zhuravlev, KS
Ruault, MO
Citation: Ga. Kachurin et al., The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions, SEMICONDUCT, 35(10), 2001, pp. 1182-1186
Authors:
Khasanov, T
Mardezhov, AS
Yanovskaya, SG
Kachurin, GA
Kaitasov, O
Citation: T. Khasanov et al., Ellipsometric studies of annealing of SiO2 layers during the formation of light-emitting Si nanocrystals in them, OPT SPECTRO, 90(6), 2001, pp. 831-834
Authors:
Kachurin, GA
Yanovskaya, SG
Ruault, MO
Gutakovskii, AK
Zhuravlev, KS
Kaitasov, O
Bernas, H
Citation: Ga. Kachurin et al., The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers, SEMICONDUCT, 34(8), 2000, pp. 965-970