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Citation: H. Kwon et al., Electrical characteristics of ultra-thin oxynitride gate dielectric prepared by reoxidation of thermal nitride in D2O, JPN J A P 2, 39(4A), 2000, pp. L273-L274

Authors: Yeo, I Shin, S Lee, HS Chang, SP

Citation: I. Yeo et al., Statistical damage assessment of framed structures from static responses, J ENG MEC, 126(4), 2000, pp. 414-421