Citation: Jw. Bae et al., Effects of oxygen ion beam plasma conditions on the properties of Indium tin oxide thin films, VACUUM, 56(1), 2000, pp. 77-81
Authors:
Kim, JS
Bae, JW
Kim, HJ
Lee, NE
Yeom, GY
Oh, KH
Citation: Js. Kim et al., Effects of oxygen radical on the properties of indium tin oxide thin filmsdeposited at room temperature by oxygen ion beam assisted evaporation, THIN SOL FI, 377, 2000, pp. 103-108
Authors:
Kim, HJ
Bae, JW
Kim, JS
Kim, KS
Jang, YC
Yeom, GY
Lee, NE
Citation: Hj. Kim et al., Electrical, optical, and structural characteristics of ITO thin films by krypton and oxygen dual ion-beam assisted evaporation at room temperature, THIN SOL FI, 377, 2000, pp. 115-121
Authors:
Bae, JW
Park, JY
Hwang, SW
Yeom, GY
Kim, KD
Cho, YA
Jeon, JS
Choi, D
Citation: Jw. Bae et al., Characterization of yttria-stabilized zirconia thin films prepared by radio frequency magnetron sputtering for a combustion control oxygen sensor, J ELCHEM SO, 147(6), 2000, pp. 2380-2384
Authors:
Kim, HS
Yoon, YK
Lee, YH
Ko, YW
Park, JW
Yeom, GY
Citation: Hs. Kim et al., Effects of etch-induced damage and contamination on the physical and electrical properties of cobalt silicides, JPN J A P 1, 38(10), 1999, pp. 5788-5791
Citation: Sw. Hwang et al., Effects of variously configured magnets on the characteristics of inductively coupled plasmas, J VAC SCI A, 17(4), 1999, pp. 1211-1216
Citation: Wj. Lee et al., Facet formation of a GaN-based device using chemically assisted ion beam etching with a photoresist mask, J VAC SCI A, 17(4), 1999, pp. 1230-1234
Citation: Kj. An et al., Etch characteristics of optical waveguides using inductively coupled plasmas with multidipole magnets, J VAC SCI A, 17(4), 1999, pp. 1483-1487
Authors:
Cho, JH
Kim, R
Lee, KW
Yeom, GY
Kim, JY
Park, JW
Citation: Jh. Cho et al., Effect of CaO addition on the firing voltage of MgO films in AC plasma display panels, THIN SOL FI, 350(1-2), 1999, pp. 173-177
Citation: Yj. Lee et al., Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl-2/N-2 and Cl-2/HBr plasmas, THIN SOL FI, 341(1-2), 1999, pp. 168-171
Citation: Kj. An et al., A study on the characteristics of inductively coupled plasma using multidipole magnets and its application to oxide etching, THIN SOL FI, 341(1-2), 1999, pp. 176-179
Citation: Wj. Lee et al., Investigation of surface polymerization on silicon exposed to C4F8 heliconwave plasmas, THIN SOL FI, 341(1-2), 1999, pp. 184-187
Authors:
Cho, JH
Kim, R
Lee, KW
Son, CY
Yeom, GY
Kim, HJ
Kim, JY
Park, JW
Citation: Jh. Cho et al., Low-voltage characteristics of MgO-CaO films as a protective layer for AC plasma display panels by e-beam evaporation, J MATER SCI, 34(20), 1999, pp. 5055-5059
Authors:
Lee, S
Kim, DJ
Yang, SH
Park, J
Sohn, S
Oh, K
Kim, YT
Kim, JY
Yeom, GY
Park, JW
Citation: S. Lee et al., Thermal stability enhancement of Cu/WN/SiOF/Si multilayers by post-plasma treatment of fluorine-doped silicon dioxide, J APPL PHYS, 85(1), 1999, pp. 473-477
Authors:
Kim, HS
Lee, WJ
Yeom, GY
Kim, JH
Whang, KW
Citation: Hs. Kim et al., Etch-induced physical damage and contamination during highly selective oxide etching using C4F8/H-2 helicon wave plasmas, J ELCHEM SO, 146(4), 1999, pp. 1517-1522
Citation: Yj. Lee et al., Effects of post annealing and oxidation processes on the removal of damagegenerated during the shallow trench etch process, JPN J A P 1, 37(12B), 1998, pp. 6916-6921
Citation: Wj. Lee et al., Etch properties of gallium nitride using chemically assisted ion beam etching (CAIBE), JPN J A P 1, 37(12B), 1998, pp. 7006-7009