Authors: Yoon, IT Han, SY Park, HL Kim, TW

Citation: It. Yoon et al., Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates, J PHYS CH S, 62(3), 2001, pp. 607-611

Authors: Buh, GH Chung, HJ Yi, JH Yoon, IT Kuk, Y

Citation: Gh. Buh et al., Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy, J APPL PHYS, 90(1), 2001, pp. 443-448

Authors: Kim, CK Yoon, IT Kuk, Y Lim, H

Citation: Ck. Kim et al., Variable-temperature scanning capacitance microscopy: A way to probe charge traps in oxide or semiconductor, APPL PHYS L, 78(5), 2001, pp. 613-615

Authors: Buh, GH Chung, HJ Kim, CK Yi, JH Yoon, IT Kuk, Y

Citation: Gh. Buh et al., Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy, APPL PHYS L, 77(1), 2000, pp. 106-108

Authors: Yoon, IT Park, HL

Citation: It. Yoon et Hl. Park, Transport property of Sn-doped In0.5Ga0.5P layers grown by liquid phase epitaxy, THIN SOL FI, 340(1-2), 1999, pp. 297-300

Authors: Yoon, IT

Citation: It. Yoon, Temperature dependence of free-exciton luminescence of undoped In0.5Ga0.5Players grown by liquid phase epitaxy, J MAT SCI L, 17(24), 1998, pp. 2043-2045