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Results: 26-41/41
Authors:
Lee, JC
Yoon, SG
Citation: Jc. Lee et Sg. Yoon, Characterization of (Ba1-x,Sr-x)TiO3 thin films deposited on Pt/Ti/SiO2/Sisubstrates with different Ti buffer layer thicknesses, J VAC SCI B, 17(5), 1999, pp. 2182-2185
Authors:
Shin, WC
Yoon, SG
Citation: Wc. Shin et Sg. Yoon, Effect of RF power on the growth and electrical properties of SrBi2Ta2O9 thin films by plasma-enhanced metalorganic chemical vapor deposition, INTEGR FERR, 26(1-4), 1999, pp. 855-863
Authors:
Kim, JS
Yoon, SG
Citation: Js. Kim et Sg. Yoon, The zirconium doped (Ba0.65Sr0.35)(Ti1-xZrx)O-3 thin films for gbit-scale dynamic random access memory device applications, INTEGR FERR, 24(1-4), 1999, pp. 65-74
Authors:
Sung, GY
Suh, JD
Kang, KY
Hwang, JS
Yoon, SG
Lee, MC
Lee, SG
Citation: Gy. Sung et al., Characteristics of bi-crystal grain boundary junctions with different tiltangles for digital circuit applications, IEEE APPL S, 9(2), 1999, pp. 3921-3924
Authors:
Seong, NJ
Choi, ES
Yoon, SG
Citation: Nj. Seong et al., Ferroelectric SrBi2Ta2O9 thin film deposition at 550 degrees C by plasma-enhanced metalorganic chemical vapor deposition onto a metalorganic chemicalvapor deposition platinum bottom electrode, J VAC SCI A, 17(1), 1999, pp. 83-87
Authors:
Shin, WC
Seong, NJ
Choi, ES
Yoon, SG
Citation: Wc. Shin et al., Ferroelectric SrBi2Ta2O9 thin films deposited by plasma-enhanced MOCVD fornonvolatile memory device applications, J KOR PHYS, 35, 1999, pp. S115-S118
Authors:
Ahn, JH
Park, JH
Choi, GP
Choi, WY
Kim, HG
Lee, WJ
Yoon, SG
Citation: Jh. Ahn et al., Thermal stability of RuO2-based bottom electrodes during various ambient annealings, J KOR PHYS, 35, 1999, pp. S491-S495
Authors:
Choi, WY
Kim, ID
Ahn, JH
Kim, HG
Lee, WJ
Yoon, SG
Bai, K
Citation: Wy. Choi et al., Electrical properties of lead zirconate titanate thin films deposited on lanthanum nickel cobaltate, J KOR PHYS, 35, 1999, pp. S501-S504
Authors:
Choi, ES
Yoon, SG
Choi, WY
Kim, HG
Citation: Es. Choi et al., Integration of platinum bottom electrode on poly-Si for ferroelectric thinfilms, APPL SURF S, 141(1-2), 1999, pp. 77-82
Authors:
Kim, JS
Yang, CH
Yoon, SG
Choi, WY
Kim, HG
Citation: Js. Kim et al., The low temperature processing for removal of metallic bismuth in ferroelectric SrBi2Ta2O9 thin films, APPL SURF S, 140(1-2), 1999, pp. 150-155
Authors:
Choi, ES
Park, JB
Yoon, SG
Citation: Es. Choi et al., Direct integration of Pt/RuO2/Ru electrode structures on poly-Si for high dielectric thin films, FERROELECTR, 232(1-4), 1999, pp. 969-977
Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures
Authors:
Lee, JC
Choi, ES
Yoon, SG
Yoon, DS
Baik, HK
Citation: Jc. Lee et al., Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures, J ELCHEM SO, 146(8), 1999, pp. 3101-3104
Authors:
Choi, ES
Lee, JC
Hwang, JS
Park, JB
Yoon, SG
Citation: Es. Choi et al., Bottom electrode structures of Pt/RuO2/Ru for integration of (Ba,Sr)TiO3 thin films on polysilicon, J ELCHEM SO, 146(11), 1999, pp. 4189-4193
Authors:
Choi, KJ
Shin, WC
Yang, JH
Yoon, SG
Citation: Kj. Choi et al., Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer, APPL PHYS L, 75(5), 1999, pp. 722-724
Authors:
Seong, NJ
Yoon, SG
Citation: Nj. Seong et Sg. Yoon, Electrical properties of ferroelectric SrBi2Ta2O9 thin films deposited on MOCVD-Pt/SiO2/Si substrates by plasma-enhanced metalorganic chemical vapor deposition, J PHYS IV, 8(P9), 1998, pp. 255-260
Authors:
Yang, CH
Park, SS
Yoon, SG
Citation: Ch. Yang et al., Preparation of fatigue-free SrBi2Ta2O9 thin firms by rf magnetron sputtering and their ferroelectric properties, J MATER SCI, 33(11), 1998, pp. 2851-2855