Authors:
VERZELLESI G
DALFABBRO A
PAVAN P
VENDRAME L
ZABOTTO E
ZANINI A
CHANTRE A
ZANONI E
Citation: G. Verzellesi et al., SPICE MODELING OF IMPACT IONIZATION EFFECTS IN SILICON BIPOLAR-TRANSISTORS, IEE proceedings. Circuits, devices and systems, 143(1), 1996, pp. 33-40
Authors:
VENDRAME L
ZABOTTO E
DALFABBRO A
ZANINI A
VERZELLESI G
ZANONI E
CHANTRE A
PAVAN P
Citation: L. Vendrame et al., INFLUENCE OF IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL ON BIPOLAR-TRANSISTOR PARAMETERS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1636-1646