Authors: WANG LS LIU XG ZAN YD WANG D WANG J LU DC WANG ZG

Citation: Ls. Wang et al., FABRICATION OF GAN EPITAXIAL-FILMS ON AL2O3 SI(001) SUBSTRATES/, SCI CHINA E, 41(2), 1998, pp. 203-207

Authors: HAN XF ZAN YD WANG QY WANG J YANG FM MA L

Citation: Xf. Han et al., STRUCTURE AND MAGNETIC-PROPERTIES OF NITRIDES R3FE29-XCRXN4, Acta physica Sinica, 7(1), 1998, pp. 38-46

Authors: WANG LS LIU XL ZAN YD WANG D LU DC WANG ZG WANG YT CHENG LS ZHANG Z

Citation: Ls. Wang et al., THE GROWTH AND CHARACTERIZATION OF GAN GROWN ON AN AL2O3 COATED (001)SI SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 193(4), 1998, pp. 484-490

Authors: WANG LS LIU XL ZAN YD WANG J WANG D LU DC WANG ZG

Citation: Ls. Wang et al., WURTZITE GAN EPITAXIAL-GROWTH ON A SI(001) SUBSTRATE USING GAMMA-AL2O3 AS AN INTERMEDIATE LAYER, Applied physics letters, 72(1), 1998, pp. 109-111

Authors: WANG QY ZAN YD WANG JH YU YH

Citation: Qy. Wang et al., COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIREFILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 43-46