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Results:
1-8
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Results: 8
Authors:
WANG JJ
LAMBERS ES
PEARTON SJ
OSTLING M
ZETTERLING CM
GROW JM
REN F
SHUL RJ
Citation: Jj. Wang et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2204-2209
Authors:
ZETTERLING CM
DAHLQUIST F
LUNDBERG N
OSTLING M
ROTTNER K
RAMBERG L
Citation: Cm. Zetterling et al., JUNCTION BARRIER SCHOTTKY DIODES IN 6H SIC, Solid-state electronics, 42(9), 1998, pp. 1757-1759
Authors:
WANG JJ
LAMBERS ES
PEARTON SJ
OSTLING M
ZETTERLING CM
GROW JM
REN F
Citation: Jj. Wang et al., HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS, Solid-state electronics, 42(5), 1998, pp. 743-747
Authors:
ZETTERLING CM
OSTLING M
WONGCHOTIGUL K
SPENCER MG
TANG X
HARRIS CI
NORDELL N
WONG SS
Citation: Cm. Zetterling et al., INVESTIGATION OF ALUMINUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON SILICON, Journal of applied physics, 82(6), 1997, pp. 2990-2995
Authors:
ZETTERLING CM
OSTLING M
NORDELL N
SCHON O
DESCHLER M
Citation: Cm. Zetterling et al., INFLUENCE OF GROWTH-CONDITIONS ON ELECTRICAL CHARACTERISTICS OF ALN ON SIC, Applied physics letters, 70(26), 1997, pp. 3549-3551
Authors:
ZETTERLING CM
OSTLING M
Citation: Cm. Zetterling et M. Ostling, A NOVEL UMOS CAPACITOR TEST STRUCTURE FOR SIC DEVICES, Solid-state electronics, 39(9), 1996, pp. 1396-1397
Authors:
ZETTERLING CM
OSTLING M
Citation: Cm. Zetterling et M. Ostling, THERMAL-OXIDATION OF N-TYPE AND P-TYPE 6H SILICON-CARBIDE, Physica scripta. T, 54, 1994, pp. 291-293
Authors:
LUNDBERG N
ZETTERLING CM
OSTLING M
Citation: N. Lundberg et al., TEMPERATURE STABILITY OF COBALT SCHOTTKY CONTACTS ON N-TYPE AND P-TYPE 6H SILICON-CARBIDE, Applied surface science, 73, 1993, pp. 316-321
Risultati:
1-8
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