Authors:
BYRNE HJ
MASER WK
KAISER M
RUHLE WW
AKSELROD L
WERNER AT
ANDERS J
ZHOU XQ
MAHLER G
KUHN T
MITTELBACH A
ROTH S
Citation: Hj. Byrne et al., MANY-BODY EFFECTS IN THE HIGHLY EXCITED-STATE OF FULLERENES - COMPARISON TO INDIRECT BAND-GAP SEMICONDUCTORS, Applied physics. A, Solids and surfaces, 57(4), 1993, pp. 303-308
Authors:
HOHENESTER U
SUPANCIC P
KOCEVAR P
ZHOU XQ
KUTT W
KURZ H
Citation: U. Hohenester et al., SUBPICOSECOND THERMALIZATION AND RELAXATION OF HIGHLY PHOTOEXCITED ELECTRONS AND HOLES IN INTRINSIC AND P-TYPE GAAS AND INP, Physical review. B, Condensed matter, 47(20), 1993, pp. 13233-13245
Citation: Xq. Zhou et Jn. Hay, STRUCTURE-PROPERTY RELATIONSHIPS IN ANNEALED BLENDS OF LINEAR LOW-DENSITY POLYETHYLENE WITH ISOTACTIC POLYPROPYLENE, Polymer, 34(22), 1993, pp. 4710-4716
Authors:
PEDERSEN JE
KEIDING SR
SORENSEN CB
LINDELOF PE
RUHLE WW
ZHOU XQ
Citation: Je. Pedersen et al., 5-THZ BANDWIDTH FROM A GAAS-ON-SILICON PHOTOCONDUCTIVE RECEIVER, Journal of applied physics, 74(11), 1993, pp. 7022-7024
Citation: T. Dekorsy et al., INVESTIGATION OF FIELD, CARRIER, AND COHERENT PHONON DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 63(21), 1993, pp. 2899-2901
Authors:
HOHENESTER U
SUPANCIC P
KOCEVAR P
ZHOU XQ
LEMMER U
CHO GC
KUTT W
KURZ H
Citation: U. Hohenester et al., DOPING DEPENDENCE OF THE ULTRAFAST THERMALIZATION AND RELAXATION OF HIGHLY PHOTOEXCITED CARRIERS IN BULK POLAR SEMICONDUCTORS, Semiconductor science and technology, 7(3B), 1992, pp. 176-179