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Results:
1-14
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Results: 14
Authors:
FLEISCHMAN AJ
ZORMAN CA
MEHREGANY M
Citation: Aj. Fleischman et al., ETCHING OF 3C-SIC USING CHF3 O-2 AND CHF3/O-2/HE PLASMAS AT 1.75 TORR/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 536-539
Authors:
ZORMAN CA
ROY S
WU CH
FLEISCHMAN AJ
MEHREGANY M
Citation: Ca. Zorman et al., CHARACTERIZATION OF POLYCRYSTALLINE SILICON-CARBIDE FILMS GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION ON POLYCRYSTALLINE SILICON, Journal of materials research, 13(2), 1998, pp. 406-412
Authors:
VINOD KN
ZORMAN CA
YASSEEN AA
MEHREGANY M
Citation: Kn. Vinod et al., FABRICATION OF LOW DEFECT DENSITY 3C-SIC ON SIO2 STRUCTURES USING WAFER BONDING TECHNIQUES, Journal of electronic materials, 27(3), 1998, pp. 17-20
Authors:
RAJAN N
ZORMAN CA
MEHREGANY M
DEANNA R
HARVEY RJ
Citation: N. Rajan et al., EFFECT OF MEMS-COMPATIBLE THIN-FILM HARD COATINGS ON THE EROSION RESISTANCE OF SILICON MICROMACHINED ATOMIZERS, Surface & coatings technology, 109(1-3), 1998, pp. 391-397
Authors:
RAJAN N
ZORMAN CA
MEHREGANY M
DEANNA R
HARVEY R
Citation: N. Rajan et al., PERFORMANCE OF 3C-SIC THIN-FILMS AS PROTECTIVE COATINGS FOR SILICON-MICROMACHINED ATOMIZERS, Thin solid films, 315(1-2), 1998, pp. 170-178
Authors:
MEHREGANY M
ZORMAN CA
RAJAN N
WU CH
Citation: M. Mehregany et al., SILICON-CARBIDE MEMS FOR HARSH ENVIRONMENTS, Proceedings of the IEEE, 86(8), 1998, pp. 1594-1610
Authors:
ZORMAN CA
MEHREGANY M
KAHN H
HEUER AH
Citation: Ca. Zorman et al., NEW DEVELOPMENTS IN MEMS USING SIC AND TINI SHAPE-MEMORY ALLOY MATERIALS, Current opinion in solid state & materials science, 2(5), 1997, pp. 566-570
Authors:
ZORMAN CA
FLEISCHMAN AJ
DEWA AS
MEHREGANY M
JACOB C
NISHINO S
PIROUZ P
Citation: Ca. Zorman et al., EPITAXIAL-GROWTH OF 3C-SIC FILMS ON 4 INCH DIAM (100)SILICON-WAFERS BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(8), 1995, pp. 5136-5138
Authors:
WAINRIGHT JS
ZORMAN CA
Citation: Js. Wainright et Ca. Zorman, RUTHERFORD BACKSCATTERING STUDIES OF POLYPYRROLE FILMS .1. EFFECT OF ELECTROLYTE ON DEPOSITION EFFICIENCY, Journal of the Electrochemical Society, 142(2), 1995, pp. 379-383
Authors:
WAINRIGHT JS
ZORMAN CA
Citation: Js. Wainright et Ca. Zorman, RUTHERFORD BACKSCATTERING STUDIES OF POLYPYRROLE FILMS .2. EFFECT OF IONIC SIZE ON MOBILITY, Journal of the Electrochemical Society, 142(2), 1995, pp. 384-388
Authors:
MEARINI GT
KRAINSKY IL
DAYTON JA
WANG YX
ZORMAN CA
ANGUS JC
ANDERSON DF
Citation: Gt. Mearini et al., STABLE SECONDARY-ELECTRON EMISSION FROM CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS COATED WITH ALKALI-HALIDES, Applied physics letters, 66(2), 1995, pp. 242-244
COMPOSITION AND PHYSICAL-PROPERTIES OF THIN A-C N AND A-C N H FILMS DEPOSITED BY ION-BEAM TECHNIQUES
Authors:
ZORMAN CA
SHIAO JS
HEIDGER S
HOFFMAN RW
Citation: Ca. Zorman et al., COMPOSITION AND PHYSICAL-PROPERTIES OF THIN A-C N AND A-C N H FILMS DEPOSITED BY ION-BEAM TECHNIQUES, Surface and interface analysis, 21(2), 1994, pp. 95-100
Authors:
RYBICKI GC
ZORMAN CA
Citation: Gc. Rybicki et Ca. Zorman, DEEP-LEVEL DEFECTS AND CARRIER REMOVAL DUE TO PROTON AND ALPHA-PARTICLE IRRADIATION OF INP, Journal of applied physics, 75(6), 1994, pp. 3187-3189
Authors:
MEARINI GT
KRAINSKY IL
DAYTON JA
WANG YX
ZORMAN CA
ANGUS JC
HOFFMAN RW
Citation: Gt. Mearini et al., STABLE SECONDARY-ELECTRON EMISSION OBSERVATIONS FROM CHEMICAL-VAPOR-DEPOSITED DIAMOND, Applied physics letters, 65(21), 1994, pp. 2702-2704
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1-14
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