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Results: 1-19 |
Results: 19
Temperature dependence and origin of InP(100) reflectance anisotropy down to 20 K - art. no. 245303
Authors: Visbeck, S Hannappel, T Zorn, M Zettler, JT Willig, F
Citation: S. Visbeck et al., Temperature dependence and origin of InP(100) reflectance anisotropy down to 20 K - art. no. 245303, PHYS REV B, 6324(24), 2001, pp. 5303
Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV
Authors: Lindquist, OPA Jarrendahl, K Peters, S Zettler, JT Cobet, C Esser, N Aspnes, DE Henry, A Edwards, NV
Citation: Opa. Lindquist et al., Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV, APPL PHYS L, 78(18), 2001, pp. 2715-2717
MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy
Authors: Haberland, K Bhattacharya, A Zorn, M Weyers, M Zettler, JT Richter, W
Citation: K. Haberland et al., MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy, J ELEC MAT, 29(1), 2000, pp. 94-98
Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth
Authors: Pristovsek, M Menhal, H Zettler, JT Richter, W
Citation: M. Pristovsek et al., Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth, APPL SURF S, 166(1-4), 2000, pp. 433-436
In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry
Authors: Meyne, C Gensch, M Peters, S Pohl, UW Zettler, JT Richter, W
Citation: C. Meyne et al., In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry, THIN SOL FI, 364(1-2), 2000, pp. 12-15
Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100)
Authors: Hannappel, T Visbeck, S Zorn, M Zettler, JT Willig, F
Citation: T. Hannappel et al., Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100), J CRYST GR, 221, 2000, pp. 124-128
In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy
Authors: Pristovsek, M Han, B Zettler, JT Richter, W
Citation: M. Pristovsek et al., In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy, J CRYST GR, 221, 2000, pp. 149-155
Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques
Authors: Steimetz, E Wehnert, T Kirmse, H Poser, F Zettler, JT Neumann, W Richter, W
Citation: E. Steimetz et al., Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques, J CRYST GR, 221, 2000, pp. 592-598
In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry
Authors: Peters, S Schmidtling, T Trepk, T Pohl, UW Zettler, JT Richter, W
Citation: S. Peters et al., In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry, J APPL PHYS, 88(7), 2000, pp. 4085-4090
Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption
Authors: Pristovsek, M Trepk, T Klein, M Zettler, JT Richter, W
Citation: M. Pristovsek et al., Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption, J APPL PHYS, 87(3), 2000, pp. 1245-1250
Spectroscopic process sensors in MOVPE device production
Authors: Haberland, K Kurpas, P Pristovsek, M Zettler, JT Veyers, M Richter, W
Citation: K. Haberland et al., Spectroscopic process sensors in MOVPE device production, APPL PHYS A, 68(3), 1999, pp. 309-313
Optical response of reconstructed GaP(001) surfaces
Authors: Zorn, M Junno, B Trepk, T Bose, S Samuelson, L Zettler, JT Richter, W
Citation: M. Zorn et al., Optical response of reconstructed GaP(001) surfaces, PHYS REV B, 60(16), 1999, pp. 11557-11563
Correlation of InGaP(001) surface structure during growth and bulk ordering
Authors: Zorn, M Kurpas, P Shkrebtii, AI Junno, B Bhattacharya, A Knorr, K Weyers, M Samuelson, L Zettler, JT Richter, W
Citation: M. Zorn et al., Correlation of InGaP(001) surface structure during growth and bulk ordering, PHYS REV B, 60(11), 1999, pp. 8185-8190
Growth of self-assembled (Zn)CdSe nanostructures on ZnSe by migration enhanced epitaxy
Authors: Leonardi, K Hommel, D Meyne, C Zettler, JT Richter, W
Citation: K. Leonardi et al., Growth of self-assembled (Zn)CdSe nanostructures on ZnSe by migration enhanced epitaxy, J CRYST GR, 202, 1999, pp. 1222-1225
Reconstructions of the GaAs (1 1 3) surface
Authors: Pristovsek, M Menhal, H Wehnert, T Zettler, JT Schmidtling, T Esser, N Richter, W Setzer, C Platen, J Jacobi, K
Citation: M. Pristovsek et al., Reconstructions of the GaAs (1 1 3) surface, J CRYST GR, 195(1-4), 1998, pp. 1-5
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
Authors: Zettler, JT Haberland, K Zorn, M Pristovsek, M Richter, W Kurpas, P Weyers, M
Citation: Jt. Zettler et al., Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques, J CRYST GR, 195(1-4), 1998, pp. 151-162
In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere
Authors: Hardtdegen, H Pristovsek, M Menhal, H Zettler, JT Richter, W Schmitz, D
Citation: H. Hardtdegen et al., In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere, J CRYST GR, 195(1-4), 1998, pp. 211-216
In situ monitoring and control of InGaP growth on GaAs in MOVPE
Authors: Zorn, M Trepk, T Kurpas, P Weyers, M Zettler, JT Richter, W
Citation: M. Zorn et al., In situ monitoring and control of InGaP growth on GaAs in MOVPE, J CRYST GR, 195(1-4), 1998, pp. 223-227
GaAs cap layer growth and In-segregation effects on self-assembled InAs quantum dots monitored by optical techniques
Authors: Steimetz, E Wehnert, T Haberland, K Zettler, JT Richter, W
Citation: E. Steimetz et al., GaAs cap layer growth and In-segregation effects on self-assembled InAs quantum dots monitored by optical techniques, J CRYST GR, 195(1-4), 1998, pp. 530-539
Risultati: 1-19 |