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Results: 1-25/33
Authors:
Stojkovic, D
Zhang, PH
Crespi, VH
Citation: D. Stojkovic et al., Smallest nanotube: Breaking the symmetry of sp(3) bonds in tubular geometries - art. no. 125502, PHYS REV L, 8712(12), 2001, pp. 5502
Authors:
Zhang, PH
Crespi, VH
Chang, E
Louie, SG
Cohen, ML
Citation: Ph. Zhang et al., Computational design of direct-bandgap semiconductors that lattice-match silicon, NATURE, 409(6816), 2001, pp. 69-71
Authors:
Yang, ZJ
Li, CX
Zhang, PH
Zhao, RH
Citation: Zj. Yang et al., A novel approach of inductance matrix inversion in induction motor digitalsimulation, JPN J A P 1, 39(12A), 2000, pp. 6768-6770
Authors:
Dang, AM
Wang, B
Li, W
Zhang, PH
Liu, GZ
Zheng, DY
Ruan, YM
Liu, LS
Citation: Am. Dang et al., Plasma endothelin-1 levels and circulating endothelial cells in patients with aortoarteritis, HYPERTENS R, 23(5), 2000, pp. 541-544
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., Study of doping concentration variation in InGaAs/InP high electron mobility transistor layer structures by Raman scattering, J VAC SCI A, 18(2), 2000, pp. 713-716
Authors:
Shi, W
Zhang, DH
Zhang, PH
Yoon, SF
Citation: W. Shi et al., Optical properties of p-type InGaAs/AlGaAs multiple quantum well structures, MICROEL ENG, 51-2, 2000, pp. 181-187
Authors:
Radhakrishnan, K
Patrick, THK
Zhang, PH
Zheng, HQ
Yoon, SF
Raman, A
Citation: K. Radhakrishnan et al., Effect of growth interruption on the electrical and optical characteristics of InP/InGaAs HEMT structures, MICROEL ENG, 51-2, 2000, pp. 433-440
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures, MICROEL ENG, 51-2, 2000, pp. 441-448
Authors:
Zhang, PH
Crespi, VH
Citation: Ph. Zhang et Vh. Crespi, Plastic deformations of boron-nitride nanotubes: An unexpected weakness, PHYS REV B, 62(16), 2000, pp. 11050-11053
Authors:
Cao, WC
Gao, YM
Zhang, PH
Zhang, XT
Dai, QH
Dumler, JS
Fang, LQ
Yang, H
Citation: Wc. Cao et al., Identification of Ehrlichia chaffeensis by nested PCR in ticks from southern China, J CLIN MICR, 38(7), 2000, pp. 2778-2780
Authors:
Cao, WC
Zhao, QM
Zhang, PH
Dumler, JS
Zhang, XT
Fang, LQ
Yang, H
Citation: Wc. Cao et al., Granulocytic ehrlichiae in Ixodes persulcatus ticks from an area in China where Lyme disease is endemic, J CLIN MICR, 38(11), 2000, pp. 4208-4210
Authors:
Zheng, HQ
Wang, H
Zhang, PH
Zeng, Z
Radahakrishnan, K
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Band gap narrowing effect in Be-doped AlxGa1-xAs studied by photoluminescence spectroscopy, SOL ST ELEC, 44(1), 2000, pp. 37-40
Authors:
Lammert, PE
Zhang, PH
Crespi, VH
Citation: Pe. Lammert et al., Gapping by squashing: Metal-insulator and insulator-metal transitions in collapsed carbon nanotubes, PHYS REV L, 84(11), 2000, pp. 2453-2456
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Gay, BP
Zhang, PH
Citation: Sf. Yoon et al., Observation of weak ordering effects and surface morphology study of InGaPgrown by solid source molecular beam epitaxy, MICROELEC J, 31(1), 2000, pp. 15-21
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Zhang, PH
Citation: Sf. Yoon et al., Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates, J CRYST GR, 208(1-4), 2000, pp. 197-204
Authors:
Zhang, DH
Zhang, WM
Osotchan, T
Zhang, PH
Yoon, SF
Shi, X
Citation: Dh. Zhang et al., Intersubband absorption from InGaAlAs/InAlAs multiple quantum-well structures grown by molecular-beam epitaxy, APPL PHYS L, 76(24), 2000, pp. 3579-3581
Authors:
Yoon, SF
Zheng, HQ
Zhang, PH
Man, KW
Ng, GI
Citation: Sf. Yoon et al., Molecular beam epitaxial growth of InP using a valved phosphorus cracker cell: Optimization of electrical, optical and surface morphology characteristics, JPN J A P 1, 38(2B), 1999, pp. 981-984
Authors:
Zhang, DH
Shi, W
Zhang, PH
Yoon, SF
Citation: Dh. Zhang et al., Doping effects on P-type InGaAs/AlGaAs quantum well structures for infrared photodetectors grown by molecular beam epitaxy, JPN J A P 2, 38(4A), 1999, pp. L360-L362
Authors:
Downs, J
Zhang, PH
Peterson, ML
Citation: J. Downs et al., A high-speed high-resolution ultrasonic inspection machine, IEEE-A T M, 4(3), 1999, pp. 301-311
Authors:
Yoon, SF
Zhang, PH
Zheng, HQ
Citation: Sf. Yoon et al., Electrical and optical characteristics of molecular beam epitaxial Be-doped In0.53Ga0.26Al0.21As layers grown lattice-matched on InP (100) substrates, MAT SCI E B, 60(3), 1999, pp. 179-184
Authors:
Dang, AM
Zheng, DY
Wang, B
Zhang, YQ
Zhang, PH
Yu, MF
Liu, GZ
Liu, LS
Citation: Am. Dang et al., The role of the renin-angiotensin and cardiac sympathetic nervous systems in the development of hypertension and left ventricular hypertrophy in spontaneously hypertensive rats, HYPERTENS R, 22(3), 1999, pp. 217-221
Authors:
Luo, XR
Li, JB
Wu, H
Zhang, PH
Citation: Xr. Luo et al., A survey of ionic conductivity of soil and its significance in prospectingfor ore deposits concealed under thick overburden, J GEOCHEM E, 66(1-2), 1999, pp. 307-311
Molecular beam epitaxial growth of In1-x-yGaxAlyAs: effects of substrate temperature and V/III ratio
Authors:
Yoon, SF
Zhang, PH
Zheng, HQ
Radhakrishnan, K
Citation: Sf. Yoon et al., Molecular beam epitaxial growth of In1-x-yGaxAlyAs: effects of substrate temperature and V/III ratio, MATER CH PH, 59(1), 1999, pp. 20-25
Authors:
Zhang, PH
Crespi, VH
Citation: Ph. Zhang et Vh. Crespi, Nucleation of carbon nanotubes without pentagonal rings, PHYS REV L, 83(9), 1999, pp. 1791-1794
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., InP/InxGa1-xAs (0.53 <= x <= 0.81) high electron mobility transistor structures grown by solid source molecular beam epitaxy, J CRYST GR, 207(1-2), 1999, pp. 8-14