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Results: 26-32/32
Authors:
Zhao, QX
Nawaz, M
Karlsteen, M
Sodervall, U
Willander, M
Stenarson, J
Zirath, H
Strupinski, W
Citation: Qx. Zhao et al., Optical and electrical characterization of MOCVD-grown modulation-doped field effect transistors, SEMIC SCI T, 14(8), 1999, pp. 736-739
Authors:
Zhao, QX
Willander, M
Holtz, PO
Lu, W
Dou, HF
Shen, SC
Li, G
Jagadish, C
Citation: Qx. Zhao et al., Radiative recombination in p-type delta-doped layers in GaAs, PHYS REV B, 60(4), 1999, pp. R2193-R2196
Authors:
Zhao, QX
Willander, M
Citation: Qx. Zhao et M. Willander, Theoretical investigation of shallow acceptors confined in Si/Si1-xGex quantum well structures, J APPL PHYS, 86(10), 1999, pp. 5624-5629
Authors:
Zhao, QX
Willander, M
Citation: Qx. Zhao et M. Willander, Stress dependence of infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells, J APPL PHYS, 85(7), 1999, pp. 3922-3924
Authors:
Zhu, LH
Zhao, QX
Gu, HC
Lu, YS
Citation: Lh. Zhu et al., Application of instrumented impact test for studying dynamic fracture property of 9Cr-1Mo-V-Nb-N steel, ENG FRACT M, 64(3), 1999, pp. 327-336
Authors:
Wongmanerod, S
Holtz, PO
Sernelius, B
Reginski, K
Bugajski, M
Godlewski, M
Mauritz, O
Zhao, QX
Bergman, JP
Monemar, B
Citation: S. Wongmanerod et al., Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells, PHYS ST S-B, 210(2), 1998, pp. 615-620
Authors:
Zhao, QX
Holtz, PO
Willander, M
Citation: Qx. Zhao et al., Theoretical calculations of shallow acceptor states in strained quantum well structures, PHYS ST S-B, 210(2), 1998, pp. 693-697