AAAAAA

   
Results: 1-15 |
Results: 15
Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-dopedSi-rich SiO2 films deposited by magnetron sputtering
Authors: Ran, GZ Chen, Y Ma, ZC Zong, WH Xie, LQ Guo, CG Qin, GC
Citation: Gz. Ran et al., Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-dopedSi-rich SiO2 films deposited by magnetron sputtering, CHIN PHYS L, 18(7), 2001, pp. 986-988
Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure
Authors: Chen, Y Ran, GZ Sun, YK Wang, YB Fu, JS Chen, WT Gong, YY Wu, DX Ma, ZC Zong, WH Qin, GG
Citation: Y. Chen et al., Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure, NUCL INST B, 183(3-4), 2001, pp. 305-310
4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures
Authors: Ran, GZ Qin, WC Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., 4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures, NUCL INST B, 173(3), 2001, pp. 299-303
An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films
Authors: Ran, GZ Chen, Y Yuan, FC Qiao, YP Fu, JS Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films, SOL ST COMM, 118(11), 2001, pp. 599-602
Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation
Authors: Ran, GZ Wang, ST Fu, JS Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation, J LUMINESC, 93(1), 2001, pp. 75-80
Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering
Authors: Ran, GZ Chen, Y Qin, WC Fu, JS Ma, ZC Zong, WH Lu, H Qin, J Qin, GG
Citation: Gz. Ran et al., Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering, J APPL PHYS, 90(11), 2001, pp. 5835-5837
Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure
Authors: Heng, CL Chen, Y Ma, ZC Zong, WH Qin, GG
Citation: Cl. Heng et al., Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure, J APPL PHYS, 89(10), 2001, pp. 5682-5686
Electroluminesence from Au/(SiO2/Si/SiO2) nanoscale double-barrier/n(+)-Sistructure
Authors: Sun, YK Heng, CL Wang, ST Qin, GG Ma, ZC Zong, WH
Citation: Yk. Sun et al., Electroluminesence from Au/(SiO2/Si/SiO2) nanoscale double-barrier/n(+)-Sistructure, ACT PHY C E, 49(7), 2000, pp. 1404-1408
Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films
Authors: You, LP Heng, CL Ma, SY Ma, ZC Zong, WH Wu, ZL Win, GG
Citation: Lp. You et al., Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films, J CRYST GR, 212(1-2), 2000, pp. 109-114
Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias
Authors: Heng, CL Sun, YK Wang, ST Chen, Y Qiao, YP Zhang, BR Ma, ZC Zong, WH Qin, GG
Citation: Cl. Heng et al., Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias, APPL PHYS L, 77(10), 2000, pp. 1416-1418
Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
Authors: Heng, CL Zhang, BR Qiao, YP Ma, ZC Zong, WH Qin, GG
Citation: Cl. Heng et al., Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices, PHYSICA B, 270(1-2), 1999, pp. 104-109
Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure
Authors: Wang, YQ Zhao, TP Cui, XM Ma, ZC Zong, WH Qin, GG
Citation: Yq. Wang et al., Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure, CHIN PHYS L, 16(8), 1999, pp. 605-607
A comparative study of electroluminescence from nanosize Si particle embedded silicon oxide films and that from nanosize Ge particle embedded siliconoxide films
Authors: Qin, GG Bai, GF Li, AP Ma, SY Sun, YK Zhang, BR Ma, ZC Zong, WH
Citation: Gg. Qin et al., A comparative study of electroluminescence from nanosize Si particle embedded silicon oxide films and that from nanosize Ge particle embedded siliconoxide films, THIN SOL FI, 338(1-2), 1999, pp. 131-135
Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si
Authors: Qin, GG Heng, CL Bai, GF Wu, K Li, CY Ma, ZC Zong, WH You, LP
Citation: Gg. Qin et al., Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si, APPL PHYS L, 75(23), 1999, pp. 3629-3631
Synchronized swinging of electroluminescence intensity and peak wavelengthwith Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures
Authors: Qin, GG Wang, YQ Qiao, YP Zhang, BR Ma, ZC Zong, WH
Citation: Gg. Qin et al., Synchronized swinging of electroluminescence intensity and peak wavelengthwith Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures, APPL PHYS L, 74(15), 1999, pp. 2182-2184
Risultati: 1-15 |