Authors: Nikishin, S Kipshidze, G Kuryatkov, V Choi, K Gherasoiu, I de Peralta, LG Zubrilov, A Tretyakov, V Copeland, K Prokofyeva, T Holtz, M Asomoza, R Kudryavtsev, Y Temkin, H

Citation: S. Nikishin et al., Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111), J VAC SCI B, 19(4), 2001, pp. 1409-1412

Authors: Kalinina, E Kholujanov, G Zubrilov, A Solov'ev, V Davydov, D Tregubova, A Sheglov, M Kovarskii, A Yagovkina, M Violina, G Pensl, G Hallen, A Konstantinov, A Karlsson, S Rendakova, S Dmitriev, V

Citation: E. Kalinina et al., Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers, J APPL PHYS, 90(10), 2001, pp. 5402-5409

Authors: Bougrov, V Levinshtein, M Rumyantsev, S Zubrilov, A

Citation: V. Bougrov et al., Gallium nitride (GaN), PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, 2001, pp. 1-30

Authors: Zubrilov, A

Citation: A. Zubrilov, Indium nitride (InN), PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, 2001, pp. 49-66

Authors: Nikolaev, A Nikitina, I Zubrilov, A Mynbaeva, M Melnik, Y Dmitriev, V

Citation: A. Nikolaev et al., AlN wafers fabricated by hydride vapor phase epitaxy, MRS I J N S, 5, 2000, pp. NIL_371-NIL_375

Authors: Kalinina, E Kholujanov, G Solov'ev, V Strel'chuk, A Zubrilov, A Kossov, V Yafaev, R Kovarski, AP Hallen, A Konstantinov, A Karlsson, S Adas, C Rendakova, S Dmitriev, V

Citation: E. Kalinina et al., High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions, APPL PHYS L, 77(19), 2000, pp. 3051-3053