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Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406

Authors: Nikishin, SA Faleev, NN Zubrilov, AS Antipov, VG Temkin, H

Citation: Sa. Nikishin et al., Growth of AlGaN on Si(111) by gas source molecular beam epitaxy, APPL PHYS L, 76(21), 2000, pp. 3028-3030

Authors: Zubrilov, AS Melnik, YV Nikolaev, AE Jacobson, MA Nelson, DK Dmitriev, VA

Citation: As. Zubrilov et al., Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy, SEMICONDUCT, 33(10), 1999, pp. 1067-1071

Authors: Kuznetsov, NI Nikolaev, AE Zubrilov, AS Melnik, YV Dmitriev, VA

Citation: Ni. Kuznetsov et al., Insulating GaN : Zn layers grown by hydride vapor phase epitaxy on SiC substrates, APPL PHYS L, 75(20), 1999, pp. 3138-3140

Authors: Zubrilov, AP Zubrilov, AS

Citation: Ap. Zubrilov et As. Zubrilov, The effects, accompanied the compression of cavitation bubbles, ZH FIZ KHIM, 72(11), 1998, pp. 2066-2068