Citation: Gm. Dalpian et al., Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100), COMP MAT SC, 22(1-2), 2001, pp. 19-23
Authors:
Perry, KSP
Miguez, E
de Amorim, MB
Boaventura, MAD
da Silva, AJR
Citation: Ksp. Perry et al., Reassignment of NMR spectra and conformational study of the sesquiterpene lactone goyazensolide, MAGN RES CH, 39(4), 2001, pp. 219-221
Authors:
Venezuela, P
Dalpian, GM
da Silva, AJR
Fazzio, A
Citation: P. Venezuela et al., Ab initio determination of the atomistic structure of SixGe1-x alloy - art. no. 193202, PHYS REV B, 6419(19), 2001, pp. 3202
Citation: Gm. Dalpian et al., Adsorption of monomers on semiconductors and the importance of surface degrees of freedom - art. no. 205303, PHYS REV B, 6320(20), 2001, pp. 5303
Authors:
da Silva, CRS
Venezuela, P
da Silva, AJR
Fazzio, A
Citation: Crs. Da Silva et al., Theoretical investigation of the pressure induced cubic-diamond-beta-tin phase transition in the Si0.5Ge0.5, SOL ST COMM, 120(9-10), 2001, pp. 369-373
Authors:
da Silva, AJR
Dalpian, GM
Janotti, A
Fazzio, A
Citation: Ajr. Da Silva et al., Two-atom structures of Ge on Si(100): Dimers versus adatom pairs - art. no. 036104, PHYS REV L, 8703(3), 2001, pp. 6104-NIL_101
Authors:
Jarvis, EAA
Fattal, E
da Silva, AJR
Carter, EA
Citation: Eaa. Jarvis et al., Characterization of photoionization intermediates via ab initio molecular dynamics, J PHYS CH A, 104(11), 2000, pp. 2333-2340
Authors:
Janotti, A
Baierle, R
da Silva, AJR
Mota, R
Fazzio, A
Citation: A. Janotti et al., Electronic and structural properties of vacancy and self-interstitial defects in germanium, PHYSICA B, 274, 1999, pp. 575-578
Authors:
Pereira, RLC
Ibrahim, T
Lucchetti, L
da Silva, AJR
de Moraes, VLG
Citation: Rlc. Pereira et al., Immunosuppressive and anti-inflammatory effects of methanolic extract and the polyacetylene isolated from Bidens pilosa L., IMMUNOPHARM, 43(1), 1999, pp. 31-37
Authors:
Varella, MTD
Bettega, MHF
da Silva, AJR
Lima, MAP
Citation: Mtd. Varella et al., Cross sections for rotational excitations of NH3, PH3, AsH3, and SbH3 by electron impact, J CHEM PHYS, 110(5), 1999, pp. 2452-2464