Authors:
Atanasov, PA
Perea, A
de Castro, MJ
Chaos, JA
Gonzalo, J
Afonso, CN
Perriere, J
Citation: Pa. Atanasov et al., Luminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate, APPL PHYS A, 74(1), 2002, pp. 109-113
Authors:
Serna, R
de Castro, MJ
Chaos, JA
Suarez-Garcia, A
Afonso, CN
Fernandez, M
Vickridge, I
Citation: R. Serna et al., Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations, J APPL PHYS, 90(10), 2001, pp. 5120-5125
Authors:
de Castro, MJ
Serna, R
Chaos, JA
Afonso, CN
Hodgson, ER
Citation: Mj. De Castro et al., Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films, NUCL INST B, 166, 2000, pp. 793-797
Authors:
Serna, R
de Castro, MJ
Chaos, JA
Afonso, CN
Vickridge, I
Citation: R. Serna et al., The role of Er3+-Er3+ separation on the luminescence of Er-doped Al2O3 films prepared by pulsed laser deposition, APPL PHYS L, 75(26), 1999, pp. 4073-4075
Authors:
Gonzalez, D
Aragon, G
Araujo, D
de Castro, MJ
Garcia, R
Citation: D. Gonzalez et al., Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers, APPL PHYS L, 74(18), 1999, pp. 2649-2651