Authors: Nikishin, S Kipshidze, G Kuryatkov, V Choi, K Gherasoiu, I de Peralta, LG Zubrilov, A Tretyakov, V Copeland, K Prokofyeva, T Holtz, M Asomoza, R Kudryavtsev, Y Temkin, H

Citation: S. Nikishin et al., Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111), J VAC SCI B, 19(4), 2001, pp. 1409-1412

Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S de Peralta, LG Seryogin, GA Holtz, M Prokofyeva, TI Chu, SNG Zubrilov, AS Elyukhin, VA Nikitina, IP Nikolaev, A Melnik, Y Dmitriev, V Temkin, H

Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406

Authors: Giudice, GE Kuksenkov, DV de Peralta, LG Temkin, H

Citation: Ge. Giudice et al., Single-mode operation from an external cavity controlled vertical-cavity surface-emitting laser, IEEE PHOTON, 11(12), 1999, pp. 1545-1547