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Results:
1-3
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Results: 3
Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistorbase layer
Authors:
di Forte-Poisson, MA Bernard, S Teisseire, L Brylinski, C Cassette, S di Persio, J
Citation:
Ma. Di Forte-poisson et al., Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistorbase layer, J CRYST GR, 221, 2000, pp. 717-721
Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction
Authors:
Huet, F di Forte-Poisson, MA Romann, A Tordjman, M di Persio, J Pecz, B
Citation:
F. Huet et al., Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction, MAT SCI E B, 59(1-3), 1999, pp. 198-201
Characterization of InGaN/GaN multiple quantum well structures. Application to LEDs
Authors:
Huet, F di Forte-Poisson, MA Romann, A Tordjman, M di Persio, J
Citation:
F. Huet et al., Characterization of InGaN/GaN multiple quantum well structures. Application to LEDs, PHYS ST S-A, 176(1), 1999, pp. 103-107
Risultati:
1-3
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