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Results: 1-9 |
Results: 9
Plasma oxidation of thin aluminum layers for magnetic spin-tunnel junctions
Authors: Kuiper, AET Gillies, MF Kottler, V 't Hooft, GW van Berkum, JGM van der Marel, C Tamminga, Y Snijders, JHM
Citation: Aet. Kuiper et al., Plasma oxidation of thin aluminum layers for magnetic spin-tunnel junctions, J APPL PHYS, 89(3), 2001, pp. 1965-1972
High hole mobilities in fully-strained Si1-xGex layers (0.3 < x < 0.4) andtheir significance for SiGe pMOSFET performance
Authors: Lander, RJP Ponomarev, YV van Berkum, JGM de Boer, WB
Citation: Rjp. Lander et al., High hole mobilities in fully-strained Si1-xGex layers (0.3 < x < 0.4) andtheir significance for SiGe pMOSFET performance, IEEE DEVICE, 48(8), 2001, pp. 1826-1832
Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon
Authors: Mannino, G Stolk, PA Cowern, NEB de Boer, WB Dirks, AG Roozeboom, F van Berkum, JGM Woerlee, PH Toan, NN
Citation: G. Mannino et al., Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon, APPL PHYS L, 78(7), 2001, pp. 889-891
Drift mobilities and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3 < x < 0.4) grown on Si
Authors: Lander, RJP Ponomarev, YV van Berkum, JGM de Boer, WB Loo, R Caymax, M
Citation: Rjp. Lander et al., Drift mobilities and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3 < x < 0.4) grown on Si, J APPL PHYS, 88(4), 2000, pp. 2016-2023
Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon
Authors: Mannino, G Cowern, NEB Roozeboom, F van Berkum, JGM
Citation: G. Mannino et al., Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon, APPL PHYS L, 76(7), 2000, pp. 855-857
Low-energy grazing-angle argon-ion irradiation of silicon: A viable optionfor cleaning?
Authors: Zalm, PC van den Berg, JA van Berkum, JGM Bailey, P Noakes, TCQ
Citation: Pc. Zalm et al., Low-energy grazing-angle argon-ion irradiation of silicon: A viable optionfor cleaning?, APPL PHYS L, 76(14), 2000, pp. 1887-1889
Cluster ripening and transient enhanced diffusion in silicon
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Cluster ripening and transient enhanced diffusion in silicon, MAT SC S PR, 2(4), 1999, pp. 369-376
Energetics of self-interstitial clusters in Si
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Energetics of self-interstitial clusters in Si, PHYS REV L, 82(22), 1999, pp. 4460-4463
Boride-enhanced diffusion in silicon: Bulk and surface layers
Authors: Cowern, NEB Theunissen, MJJ Roozeboom, F van Berkum, JGM
Citation: Neb. Cowern et al., Boride-enhanced diffusion in silicon: Bulk and surface layers, APPL PHYS L, 75(2), 1999, pp. 181-183
Risultati: 1-9 |