DRIFT MOBILITY OF HOLES IN DEPOSITED DIARYLDIACETYLENE LAYERS

Authors
VANNIKOV AV TAMEEV AR MALTSEV EI MILBURN GH SHAND A WERNINCK A WRIGHT G
Citation
Av. Vannikov et al., DRIFT MOBILITY OF HOLES IN DEPOSITED DIARYLDIACETYLENE LAYERS, CHEMICAL PHYSICS REPORTS, 16(3), 1997, pp. 527-534
Citations number
27
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
CHEMICAL PHYSICS REPORTS → ACNP
ISSN journal
10741550
Volume
16
Issue
3
Year of publication
1997
Pages
527 - 534
Database
ISI
SICI code
1074-1550(1997)16:3<527:DMOHID>2.0.ZU;2-J
Abstract
The hopping mechanism of hole transport in thin diaryldiacetylene laye rs prepared by thermal deposition in vacuum is investigated. Drift mob ility in the systems studied is found to attain 10(-4) cm(2)/(V.s). Th e basic transport characteristics of charge carriers in these systems and their dependence on the electric field intensity, temperature, and chemical composition of diaryldiacetylenes are determined.