A C-V MODEL OF FERROELECTRIC THIN-FILM CAPACITOR

Authors
CHEN Z TANG TA
Citation
Z. Chen et Ta. Tang, A C-V MODEL OF FERROELECTRIC THIN-FILM CAPACITOR, Ferroelectrics, 197(1-4), 1997, pp. 747-750
Citations number
4
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
Ferroelectrics → ACNP
ISSN journal
00150193
Volume
197
Issue
1-4
Year of publication
1997
Pages
747 - 750
Database
ISI
SICI code
0015-0193(1997)197:1-4<747:ACMOFT>2.0.ZU;2-K
Abstract
A ferroelectric thin film capacitor C-V model for nonvolatile memory i s proposed based on the local hysteresis loop theory. The result of nu merical simulation is verified with experimental data within a tired s cope.