RAPID THERMAL ANNEALING EFFECT OF (BA,SR)TIO3 THIN-FILMS

This paper describes the effect of rapid thermal annealing on the elec trical properties of(Ba0.5Sr0.5)TiO3 (BST) thin films. BST thin films were grown by rf magnetron sputtering method with rapid thermal anneal ing (RTA) at various kinds of temperature. When BST thin films were de posited directly on boron doped Si(100) (P-type) substrate, silicon di ffused oxide interlayers were formed between BST and P-type Si(100) de pending on RTA temperature. Dielectric constant of BST thin film was i mproved by using RTA method and maximum value (similar to 100) was obt ained at 700 degrees C.