PREPARATION AND STRUCTURE OF PBZRO3 FILMS BY KRF PULSED-LASER DEPOSITION

Citation
Iw. Kim et al., PREPARATION AND STRUCTURE OF PBZRO3 FILMS BY KRF PULSED-LASER DEPOSITION, Ferroelectrics, 196(1-4), 1997, pp. 347-350
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
ISSN journal
00150193
Volume
196
Issue
1-4
Year of publication
1997
Pages
347 - 350
Database
ISI
SICI code
0015-0193(1997)196:1-4<347:PASOPF>2.0.ZU;2-5
Abstract
PbZrO3(PZ) thin films crystallization by rapid thermal annealing (RTA) was studied using Raman-scattering spectroscopy, and the results were compared with those of x-ray diffraction(XRD) result. It was found to be strongly affected the kinetics of subsequent amorphous-perovskite crystallization by RTA temperature. The use of such post anneals allow ed to make films of reproducible microstructure and texture [both (221 ) and (240)] prepared by RTA. The low frequency (<200 cm(-1)) Raman pe aks for the PZ film disappear and three new Raman peaks occur at the 8 3 cm(-1), 138 cm(-1), 273 cm(-1) respectively.