PbZrO3(PZ) thin films crystallization by rapid thermal annealing (RTA)
was studied using Raman-scattering spectroscopy, and the results were
compared with those of x-ray diffraction(XRD) result. It was found to
be strongly affected the kinetics of subsequent amorphous-perovskite
crystallization by RTA temperature. The use of such post anneals allow
ed to make films of reproducible microstructure and texture [both (221
) and (240)] prepared by RTA. The low frequency (<200 cm(-1)) Raman pe
aks for the PZ film disappear and three new Raman peaks occur at the 8
3 cm(-1), 138 cm(-1), 273 cm(-1) respectively.