DOMAIN PATTERN-FORMATION NEAR PHASE-TRANSITION - CHALLENGE FOR COMPUTER-SIMULATIONS

The principles of constructing a model with reduced number of degree o f freedom, which allow to simulate the evolution of domain pattern of a displacive crystal, are overviewed. The model degree of freedom, rel ated by the simple effective potential, must form modes consistent wit h symmetry of the primary and secondary order parameters of the studie d crystal. The model potential and the procedure of finding the potent ial parameters are discussed.