Lp. Liang et al., DEFECT MECHANISM AND DIELECTRIC-PROPERTIES OF MODERATE TEMPERATURE SINTERED (BALA)(TINB)O-3 BASE FERROELECTRIC CERAMIC MATERIAL, Ferroelectrics, 195(1-4), 1997, pp. 109-113
The moderate temperature sintering mechanism on both sites substituted
by high valence positive ions at site A and B of solid solutions of (
BaLa) (TiNb) O-3 system is described and the influences of the defects
on dielectric behaviours are discussed in this paper. Aiming at the p
ractical application, we have developed the multilayer capacitor ceram
ic material which has the properties as below: [GRAPHICS]