DEFECT MECHANISM AND DIELECTRIC-PROPERTIES OF MODERATE TEMPERATURE SINTERED (BALA)(TINB)O-3 BASE FERROELECTRIC CERAMIC MATERIAL

Authors
LIANG LP CHEN JQ OU M CHEN SM QIU QC JIANG T GUO YY
Citation
Lp. Liang et al., DEFECT MECHANISM AND DIELECTRIC-PROPERTIES OF MODERATE TEMPERATURE SINTERED (BALA)(TINB)O-3 BASE FERROELECTRIC CERAMIC MATERIAL, Ferroelectrics, 195(1-4), 1997, pp. 109-113
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
Ferroelectrics → ACNP
ISSN journal
00150193
Volume
195
Issue
1-4
Year of publication
1997
Pages
109 - 113
Database
ISI
SICI code
0015-0193(1997)195:1-4<109:DMADOM>2.0.ZU;2-P
Abstract
The moderate temperature sintering mechanism on both sites substituted by high valence positive ions at site A and B of solid solutions of ( BaLa) (TiNb) O-3 system is described and the influences of the defects on dielectric behaviours are discussed in this paper. Aiming at the p ractical application, we have developed the multilayer capacitor ceram ic material which has the properties as below: [GRAPHICS]