PREPARATION AND CHARACTERISTICS OF PB(ZR,TI)O-3 THIN-FILMS ON PT ELECTRODE BY RF MAGNETRON SPUTTERING

Citation
Lb. Huang et al., PREPARATION AND CHARACTERISTICS OF PB(ZR,TI)O-3 THIN-FILMS ON PT ELECTRODE BY RF MAGNETRON SPUTTERING, Ferroelectrics, 195(1-4), 1997, pp. 167-170
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
ISSN journal
00150193
Volume
195
Issue
1-4
Year of publication
1997
Pages
167 - 170
Database
ISI
SICI code
0015-0193(1997)195:1-4<167:PACOPT>2.0.ZU;2-D
Abstract
Lead zirconate titanate (PZT) thin films had been preparaed by rf magn etron sputtering. The perovskite PZT thin films were obtained by annea ling at 500 degrees C for 1 hour. Based on the indentification of the diffraction peak (d=2.50), the possible PZT solid solution fomation me chanism was discussed. The developed ferroelectric tester can sample, transfer, save and output the results about the properties of thin fil ms. Ferroelectric hysteresis loops showed a remanent polarization of 2 4.8 mu C/ cm(2) and a coercive field of 45kV/cm. Fatigue measurements showed that the PZT thin films were stable up to 4 x 10(8) cycles. The interface heterojunction effects of ferroelectric thin films on Pt el ectrode on the hysteresis loops and fatigue characteristics were discu ssed.