Lb. Huang et al., PREPARATION AND CHARACTERISTICS OF PB(ZR,TI)O-3 THIN-FILMS ON PT ELECTRODE BY RF MAGNETRON SPUTTERING, Ferroelectrics, 195(1-4), 1997, pp. 167-170
Lead zirconate titanate (PZT) thin films had been preparaed by rf magn
etron sputtering. The perovskite PZT thin films were obtained by annea
ling at 500 degrees C for 1 hour. Based on the indentification of the
diffraction peak (d=2.50), the possible PZT solid solution fomation me
chanism was discussed. The developed ferroelectric tester can sample,
transfer, save and output the results about the properties of thin fil
ms. Ferroelectric hysteresis loops showed a remanent polarization of 2
4.8 mu C/ cm(2) and a coercive field of 45kV/cm. Fatigue measurements
showed that the PZT thin films were stable up to 4 x 10(8) cycles. The
interface heterojunction effects of ferroelectric thin films on Pt el
ectrode on the hysteresis loops and fatigue characteristics were discu
ssed.