PULSED-LASER DEPOSITION OF PZT BARUO3 BI-LAYERED FILMS ON SILICON SUBSTRATE/

Authors
XU WP GU M ZHENG LR XIN HP CAO ZC OKUYAMA M LIN CG
Citation
Wp. Xu et al., PULSED-LASER DEPOSITION OF PZT BARUO3 BI-LAYERED FILMS ON SILICON SUBSTRATE/, Ferroelectrics, 195(1-4), 1997, pp. 199-202
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
Ferroelectrics → ACNP
ISSN journal
00150193
Volume
195
Issue
1-4
Year of publication
1997
Pages
199 - 202
Database
ISI
SICI code
0015-0193(1997)195:1-4<199:PDOPBB>2.0.ZU;2-9
Abstract
Bi-layered thin films of PZT(70/30) on BaRuO3 have been prepared on si licon substrate by AF excimer laser deposition(PLD). BaRuO3 thin film crystallized into perovskite-like structure with (110) orientation and became highly conductive after atmospheric thermal annealing at 700 d egrees C for 30 minutes. It was found the subsequent PLD-deposited PZT film can be efficiently transformed to its perovskite structure by ra pid thermal processing(RTP) at 700 degrees C for 100sec.