PROPOSED MECHANISM FOR THE IMPROVEMENTS OF PZT THIN-FILMS DEPOSITED BY DIRECT-CURRENT GLOW-DISCHARGE ASSISTED LASER-ABLATION

Authors
ZHENG LR LIN CG XU WP SONG SG ZOU SC MA TP
Citation
Lr. Zheng et al., PROPOSED MECHANISM FOR THE IMPROVEMENTS OF PZT THIN-FILMS DEPOSITED BY DIRECT-CURRENT GLOW-DISCHARGE ASSISTED LASER-ABLATION, Ferroelectrics, 195(1-4), 1997, pp. 203-206
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
Ferroelectrics → ACNP
ISSN journal
00150193
Volume
195
Issue
1-4
Year of publication
1997
Pages
203 - 206
Database
ISI
SICI code
0015-0193(1997)195:1-4<203:PMFTIO>2.0.ZU;2-2
Abstract
Ferroelectric thin films of Pb(Zr,Ti)O-3 (PZT) were fabricated on plat inum coated silicon using the process of direct-current glow discharge assisted laser ablation. This process improved the crystallinity and ferroelectric behavior of the films. The c-axis oriented PZT films wer e obtained when deposited at 730 degrees C with +800v discharge voltag e. A possible mechanism for the improvement of the deposition process has been proposed.