ELECTRICAL-PROPERTIES OF FERROELECTRIC BI4TI3O12 THIN-FILMS BY APMOCVD

Authors
WANG H SHEN XN SU XJ WANG Z SHANG SX WANG M
Citation
H. Wang et al., ELECTRICAL-PROPERTIES OF FERROELECTRIC BI4TI3O12 THIN-FILMS BY APMOCVD, Ferroelectrics, 195(1-4), 1997, pp. 233-236
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
Ferroelectrics → ACNP
ISSN journal
00150193
Volume
195
Issue
1-4
Year of publication
1997
Pages
233 - 236
Database
ISI
SICI code
0015-0193(1997)195:1-4<233:EOFBTB>2.0.ZU;2-6
Abstract
Bi4Ti3O12 this films with (001) preferred orientation were prepared on Si (100) Substrate by APMOCVD and RTA. The dielectric constant is 138 at room temperature, the Curie temperature is about 680 degrees C. Th e room temperature resistivities were in the range 10(10)-10(13)Ohm.cm . At low field the film exhibits Ohmic behavior and at high field the space-charge-limited-current conduction is the dominant charge transpo rt mechanism.