PREPARATION OF PLZT LSCO/ITO/SI MULTILAYER FILMS BY RF-MAGNETRON SPUTTERING/

PLZT/LSCO/ITO/Si textured multilayer films were prepared using the rf- magnetron sputtering method. La0.5Sr0.5CoO3 (LSCO) films as the bottom electrode have been grow in situ on Si with a conductive ITO buffer l ayer with RF sputtering. The LSCO film orientated in the (100) directi on deposited at 600 degrees C. The sheet resistance of LSCO/ITO compos ite electrode is about 100 Ohm/square. The PLZT(8/65/35) films have be en deposited on the substrates textured LSCO/ITO/Sistructure by RF spu ttering with the PLZT powder targets. The PLZT films with a pure perov skite structure and highly prefer orientation along (100) direction ca n be obtained when the deposition temperature is 580 degrees C. The fi lms obtained in this study show a high resistivity of over 10(10)Ohm.c m and low dielectric loss tan delta in the range of 0.01-0.03.