Be. Hayden et Is. Nandhakumar, IN-SITU STM STUDY OF TE UPD LAYERS ON LOW-INDEX PLANES OF GOLD, JOURNAL OF PHYSICAL CHEMISTRY B, 101(39), 1997, pp. 7751-7757
The structure of well-ordered atomic layers of underpotentially deposi
ted (UPD) tellurium on Au(110), Au(100) and Au(111) was studied by in-
situ scanning tunneling microscopy (STM). A series of largely commensu
rate structures is observed, with a close correspondence between cover
ages obtained from the STM images and the cyclic voltammetry assuming
complete discharge of Te4+ during adsorption. A linear dependence of t
he UPD peak current and the peak potential with the square root of the
scan rate is observed indicating that the adsorption phase transition
is associated with a two-dimensional, instantaneous nucleation proces
s. The same structures are observed in sulfuric acid and perchloric ac
id supporting electrolyte. The first UPD structure formed on Au(111) c
orresponds to a pseudohexagonal packing of Te (0.42 ML) (ML = monolaye
r) in a single domain superlattice structure with missing atom defects
. The superlattice cell is (3 root 7 x 3 root 7)R19 degrees with respe
ct to the constituent Te atom hexagonal cell and is consistent with th
e (12 x 12) structure on Au(111) reported previously. The second UPD s
tructure on Au(111) is a pseudo-morphic (1 x 1). The Te-substrate inte
raction favors site specific adsorption, and dipolar repulsion within
low-coverage layers is responsible for the open packing.